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Wrinkling C3N nano-grids in uniaxial tensile testing; a molecular dynamics study

机译:单轴拉伸试验中的皱纹C3N纳米网格; 分子动力学研究

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摘要

Two-dimensional materials in recent years have found a special place in various sciences. Graphene, as the first two-dimensional material presented, has been able to reduce the size of electronic devices from what it was. Following successful successive graphene experiments, carbon-nitride materials such as C3N and C3N4 have been considered, which can have significant properties in nanoelectromechanical applications with regard to nitrogen doped in the graphene structure. In such applications, the first issue to be considered is the strength of the structure. For this purpose, in this paper, the mechanical properties and the strengths and weaknesses of the C3N nano-grids are evaluated using the molecular dynamics method. After verifying the used model, stress-strain diagrams of the structure are drawn in different states and the effects of circular and square holes in the C3N nano-grids are discussed. The stress distribution is depicted and it is seen that in certain dimensions, the type of strain energy release is different from others. The inductive shrinkage due to stretching is the most important reason for this, and it has finally been observed that the presence of holes of dimensions of 1.8 to 3 nm causes regular wrinkles in the structure, which can be remarkable for the construction of large area C3N nano-grids.
机译:近年来二维材料在各种科学中发现了一个特殊的地方。作为所呈现的第一二维材料,石墨烯已经能够将电子设备的尺寸从它所降低。在成功的连续石墨烯实验之后,已经考虑了碳 - 氮化物材料,例如C3N和C3N4,其在掺杂在石墨烯结构中的氮气具有较大的纳米机电应用中具有显着性质。在这些应用中,要考虑的第一个问题是结构的强度。为此目的,在本文中,使用分子动力学方法评估C3N纳米栅格的机械性能和强度和弱点。在验证使用的模型之后,讨论了结构的应力 - 应变图在不同的状态下绘制,并且讨论了C3N纳米网格中的圆形和方孔的影响。描绘了应力分布,并且可以看出,在某些尺寸中,应变能释放的类型与其他尺寸不同。由于拉伸引起的感应收缩是最重要的原因,并且终于观察到尺寸为1.8至3nm的孔的存在导致结构中的常规皱纹,这对于大面积C3N的构造可能是显着的纳米网格。

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