Radiation Defects in Aluminum Nitride under Irradiation with Low-Energy C2+ Ions

摘要

The radiation resistance of ceramic materials based on aluminum nitride have been studied. The irradiation has been performed at a temperature of 300 K using 40-keV C2+ ions with a fluence varied from 10(14) to 10(15) ion/cm(2). The dependences of crystallographic characteristics and strength properties on the ion fluence have been determined on the basis of X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray analysis data. It has been found that the irradiation results in the formation of an impurity phase Al4C3 in the surface layer, which leads to an increase in the lattice parameters. This finding indicates the implantation of C2+ ions and the formation of the interstitial phase in the structure.