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Characterisation of AlN nano thin films prepared by PLD

机译:PLD制备ALN纳米薄膜的表征

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摘要

Aluminium nitride (AlN) nano thin films have been prepared by pulsed laser deposition (PLD) in this paper. The microstructure and grain size of the nano thin films were characterised by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results showed that the PLD conditions such as laser fluence, ambient pressure and substrate temperature influence the thickness, morphology and grain size of the nano thin films obviously, i.e. the surface of the nano thin films becomes rough while the grain size increases with increasing the laser fluence, ambient pressure and substrate temperature. In addition, there exists a preferred orientation growth in the thin films.
机译:本文通过脉冲激光沉积(PLD)制备氮化铝(ALN)纳米薄膜。 通过扫描电子显微镜(SEM)和X射线衍射(XRD),表征纳米薄膜的微观结构和粒度。 结果表明,显然,纳米薄膜的厚度,形态和衬底温度等PLD条件是纳米薄膜的厚度,形态和晶粒尺寸,即纳米薄膜的表面变得粗糙,而晶粒尺寸随着增加的增加而增加 激光流量,环境压力和衬底温度。 另外,薄膜中存在优选的取向生长。

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