首页> 外文期刊>Surface and Interface Analysis: SIA: An International Journal Devoted to the Development and Application of Techniques for the Analysis of Surfaces, Interfaces and Thin Films >Nanoscale imaging of hydrogen and sodium in alteration layers of corroded glass using ToF-SIMS: Is an auxiliary sputtering ion beam necessary?
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Nanoscale imaging of hydrogen and sodium in alteration layers of corroded glass using ToF-SIMS: Is an auxiliary sputtering ion beam necessary?

机译:使用TOF-SIMS改变腐蚀玻璃改变层氢气和钠的纳米级成像:是必要的辅助溅射离子束吗?

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摘要

The hydrogen (H)/sodium (Na) interface is of great interest in glass corrosion research. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) is one of the few techniques that can provide nanoscale H and Na imaging simultaneously. However, the optimized condition for ToF-SIMS imaging of H in glass is still unclear. In H depth profiling using ToF-SIMS, H background control is a key, in which an analysis ion beam and a sputtering ion beam work together in an interlaced mode to minimize it. Therefore, it is of great interest to determine if an auxiliary sputtering ion beam is also necessary to control H background in ToF-SIMS imaging of H. In this study, H imaging with and without auxiliary sputtering beams (Cs+, O-2(+), and Ar-n(+)) was compared on a corroded international simple glass (ISG). It was surprising that the H/Na interface could be directly imaged using positive ion imaging without any auxiliary sputtering ion beam under a vacuum of 2 to 3 x 10(-8) mbar. The H+ background was about 5% atomic percent on the pristine ISG glass, which was significantly lower than the H concentration in the alteration layer (similar to 15%). Moreover, positive ion imaging could show distributions of other interesting species simultaneously, providing more comprehensive information of the glass corrosion. If an auxiliary O-2(+) sputtering ion beam was used, the H+ background could be reduced but still higher than that in the depth profiling. Besides, this condition could cause significant loss of signal intensities due to strong surface charging.
机译:氢气(H)/钠(NA)界面对玻璃腐蚀研究具有很大兴趣。飞行时间二次离子质谱(TOF-SIMS)是可以同时提供纳米级H和NA成像的少数技术之一。然而,玻璃中H的TOF-SIMS成像的优化条件尚不清楚。在使用TOF-SIMS的H深度分析中,H背景控制是一个键,其中分析离子束和溅射离子束以交错模式一起工作,以使其最小化。因此,确定辅助溅射离子束是否需要在H的TOF-SIMS成像中进行辅助溅射离子束来确定辅助溅射离子束非常感兴趣。在本研究中,H成像和无辅助溅射束(CS +,O-2(+ )和AR-N(+))在腐蚀的国际简单玻璃(ISG)上进行了比较。令人惊讶的是,H / NA接口可以使用正离子成像直接成像,而没有任何辅助溅射离子束在2至3×10( - 8)曼巴的真空下。 H +背景在原始ISG玻璃上的原子百分比约为5%,其显着低于改变层中的H浓度(类似于15%)。此外,正离子成像可以同时显示其他有趣物种的分布,提供更全面的玻璃腐蚀信息。如果使用辅助O-2(+)溅射离子束,则可以减少H +背景,但仍然高于深度分析中的H +背景。此外,由于强大的表面充电,这种情况可能导致信号强度的显着损失。

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