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首页> 外文期刊>The journal of physics and chemistry of solids >Electronic and optical properties of double perovskite oxide Pb2ScMO6 (M = Ta, Sb) using a first principles approach
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Electronic and optical properties of double perovskite oxide Pb2ScMO6 (M = Ta, Sb) using a first principles approach

机译:使用第一个原理方法的双钙钛矿氧化物PB2SCMO6(M = TA,SB)的电子和光学性能

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摘要

In this study, the electronic and optical properties of the double perovskite (DP) oxides Pb2ScMO6 (M = Sb, Ta) were systematically investigated using the full-potential linearized augmented plane wave model. Calculations were performed using both the generalized gradient approximation and modified Becke-Johnson potentials. The results showed that the O-atom is responsible for the maxima in the density of states (DOS) in the valence band, whereas the Sc-atom contributes to the maximum DOS in the conduction band. The dielectric constants, absorption coefficients, and reflectivity were also calculated for these systems. The results indicated the presence of wide band gaps in both of these DPs, thereby indicating their insulating semiconducting nature.
机译:在该研究中,系统地使用全电位线性化增强平面波模型系统地研究了双钙钛矿(DP)氧化物PB2SCMO6(M = SB,TA)的电子和光学性质。 使用广义梯度近似和修改的Becke-Johnson潜力进行计算。 结果表明,O-Atom对价带中的状态密度(DOS)密度的最大值负责,而SC-原子有助于导通带中的最大DOS。 还针对这些系统计算了介电常数,吸收系数和反射率。 结果表明,两个DP中存在宽带间隙,从而指示它们的绝缘半导体性质。

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