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Electron-hole asymmetry in electrical conductivity of low-fluorinated graphene: numerical study

机译:低氟化石墨烯的电导率电子孔不对称性:数值研究

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摘要

By using the real-space Green-Kubo formalism we study numerically the electron transport properties of low-fluorinated graphene. At low temperatures the diffuse transport regime is expected to be prevalent, and we found a pronounced electron-hole asymmetry in electrical conductivity as a result of quasi-resonant scattering on the localized states. For the finite temperatures in the variable-range hopping transport regime the interpretation of numerical results leads to the appearance of local minima and maxima of the resistance near the energies of the localized states. A comparison with the experimental measurements of the resistance in graphene samples with various fluorination degrees is discussed.
机译:通过使用真实空间的绿色kubo形式主义,我们在数值上学习低氟化石墨烯的电子传输性能。 在低温下,预期漫反射制度预计普遍存在,并且我们发现由于局部状态上的准共振散射而导致导电性的明显电子孔不对称。 对于可变范围跳跃传输制度的有限温度,数值结果的解释导致局部态度的能量附近的局部最小值和最大值的外观。 讨论了与具有各种氟化度的石墨烯样品中抗性的实验测量的比较。

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