Generation of Charge Carriers in Uniformly Heated Si-Ge Films Heavily Doped with Titanium

摘要

We have studied the generation of charge carriers and development of the electromotive force (emf) in uniformly heated n-type Si-Ge films heavily doped with titanium obtained by chemical-vapor deposition on p-type silicon substrates. A maximum emf value of similar to 3 mV was observed at temperatures within 500-600 K for dark short-circuit currents similar to 0.5-1 mu A, the value of which increased with the temperature to reach similar to 3 mu A at 800 K.