A novel silicon heterojunction IBC process flow using partial etching of doped a‐Si:H to switch from hole contact to electron contact in situ with efficiencies close to 23%

Sivaramakrishnan Radhakrishnan Hariharsudan; Uddin M.D. Gius; Xu Menglei; Cho Jinyoun; Ghannam Moustafa; Gordon Ivan; Szlufcik Jozef; Poortmans Jef

摘要

Abstract > We present a novel process sequence to simplify the rear‐side patterning of the silicon heterojunction interdigitated back contact (HJ IBC) cells. In this approach, interdigitated strips of a‐Si:H (i/p + ) hole contact and a‐Si:H (i/n + ) electron contact are achieved by partially etching a blanket a‐Si:H (i/p + ) stack through an SiO <sub>x</sub> hard mask to remove only the p + a‐Si:H layer and replace it with an n + a‐Si:H layer, thereby switching from a hole contact to an electron contact in situ , without having to remove the entire passivation. This eliminates the ex situ wet clean after dry etching and also prevents re‐exposure of the crystalline silicon surface during rear‐side processing. Using a well‐controlled process, high‐quality passivation is maintained throughout the rear‐side process sequence leading to high open‐circuit voltages (V <sub>OC</sub> ). A slightly higher contact resistance at the electron contact leads to a slightly higher fill factor (FF) loss due to series resistance for cells from the partial etch route, but the FF loss due to J <sub>02</sub> ‐type recombination is lower, compared with reference cells. As a result, the best cell from the partial etch route has an efficiency of 22.9% and a V <sub>OC</sub> of 729?mV, nearly identical to the best reference cell, demonstrating that the developed partial etch process can be successfully implemented to achieve cell performance comparable with reference, but with a simpler, cheaper, and faster process sequence. </abstract> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> <div class="translation abstracttxt"> <span class="zhankaihshouqi fivelineshidden" id="abstract"> <span>机译：</span><Abstract Type =“Main”XML：Lang =“en”> <标题类型=“main”>抽象</ title> > 我们提出了一种新的工艺序列，以简化硅杂角结合的后触点（HJ IBC）细胞的后侧图案化。在这种方法中，A-Si：h的interdigated条带（I / P. + </ sup> ）孔接触和A-Si：H（I / N. + </ sup> ）通过部分蚀刻橡皮布A-Si：H（I / P）来实现电子触点 + </ sup> ）通过SIO堆叠 <sub> x </ sub> 硬面具只去除p + </ sup> a-si：h层并用n替换它 + </ sup> A-Si：H层，从而从孔接触切换到电子触点原位</ i> ，不必删除整个钝化。这消除了这一点 ex situ </ i> 干蚀刻后湿清洁，并且还防止在后侧加工期间重新暴露晶体硅表面。使用良好控制的过程，在整个后侧处理序列中保持高质量的钝化，导致高开路电压（V <sub> oc </ sub> ）。由于来自部分蚀刻路由的细胞串联电阻，电子触点处的略高较高的接触电阻导致略微较高的填充因子（FF）损耗，但由于J.引起的FF损耗 <sub> 02 </ sub> 与参考电池相比，型重组较低。结果，来自部分蚀刻路线的最佳电池的效率为22.9％和V. <sub> oc </ sub> 729？MV，几乎与最佳参考单元相同，表明可以成功实现发达的部分蚀刻工艺以实现与参考的细胞性能，但具有更简单，更便宜，更快的处理序列。 </ p> </摘要> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> </div> <div class="record"> <h2 class="all_title" id="enpatent33" >著录项</h2> <ul> <li> <span class="lefttit">来源</span> <div style="width: 86%;vertical-align: text-top;display: inline-block;"> <a href='/journal-foreign-29870/'>《Progress in photovoltaics》</a> <b style="margin: 0 2px;">|</b><span>2019年第11期</span><b style="margin: 0 2px;">|</b><span>共1页</span> </div> </li> <li> <div class="author"> <span class="lefttit">作者</span> <p id="fAuthorthree" class="threelineshidden zhankaihshouqi"> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Sivaramakrishnan Radhakrishnan Hariharsudan&option=202" target="_blank" rel="nofollow">Sivaramakrishnan Radhakrishnan Hariharsudan;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Uddin M.D. Gius&option=202" target="_blank" rel="nofollow">Uddin M.D. Gius;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Xu Menglei&option=202" target="_blank" rel="nofollow">Xu Menglei;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Cho Jinyoun&option=202" target="_blank" rel="nofollow">Cho Jinyoun;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Ghannam Moustafa&option=202" target="_blank" rel="nofollow">Ghannam Moustafa;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Gordon Ivan&option=202" target="_blank" rel="nofollow">Gordon Ivan;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Szlufcik Jozef&option=202" target="_blank" rel="nofollow">Szlufcik Jozef;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Poortmans Jef&option=202" target="_blank" rel="nofollow">Poortmans Jef;</a> </p> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zkzz" style="display: none;">展开▼</span> </div> </li> <li> <div style="display: flex;"> <span class="lefttit">作者单位</span> <div style="position: relative;margin-left: 3px;max-width: 639px;"> <div class="threelineshidden zhankaihshouqi" id="fOrgthree"> <p>Department of PhotovoltaicsIMEC (partner in EnergyVille)Leuven Belgium;</p> <p>Department of PhotovoltaicsIMEC (partner in EnergyVille)Leuven Belgium;</p> <p>Department of PhotovoltaicsIMEC (partner in EnergyVille)Leuven Belgium;</p> <p>Department of PhotovoltaicsIMEC (partner in EnergyVille)Leuven Belgium;</p> <p>EE departmentCollege of Engineering &</p> <p>Petroleum Kuwait UniversitySafat Kuwait;</p> <p>Department of PhotovoltaicsIMEC (partner in EnergyVille)Leuven Belgium;</p> <p>Department of PhotovoltaicsIMEC (partner in EnergyVille)Leuven Belgium;</p> <p>Department of PhotovoltaicsIMEC (partner in EnergyVille)Leuven Belgium;</p> </div> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zhdw" style="display: none;">展开▼</span> </div> </div> </li> <li > <span class="lefttit">收录信息</span> <span style="width: 86%;vertical-align: text-top;display: inline-block;"></span> </li> <li> <span class="lefttit">原文格式</span> <span>PDF</span> </li> <li> <span class="lefttit">正文语种</span> <span>eng</span> </li> <li> <span class="lefttit">中图分类</span> <span><a href="https://www.zhangqiaokeyan.com/clc/7667.html" title="通信系统（传输系统）">通信系统（传输系统）;</a><a href="https://www.zhangqiaokeyan.com/clc/1790.html" title="光电子技术、激光技术">光电子技术、激光技术;</a></span> </li> <li class="antistop"> <span class="lefttit">关键词</span> <p style="width: 86%;vertical-align: text-top;"> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=amorphous silicon&option=203" rel="nofollow">amorphous silicon;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=dry etch&option=203" rel="nofollow">dry etch;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=H 2 plasma&option=203" rel="nofollow">H 2 plasma;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=heterojunction&option=203" rel="nofollow">heterojunction;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=in situ processing&option=203" rel="nofollow">in situ processing;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=interdigitated back contact (IBC)&option=203" rel="nofollow">interdigitated back contact (IBC);</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=NF 3 /Ar plasma&option=203" rel="nofollow">NF 3 /Ar plasma;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=process simplification&option=203" rel="nofollow">process simplification;</a> </p> <div class="translation"> 机译：无定形硅;干蚀刻;H 2等离子体;异质结;原位加工;交叉的背面接触（IBC）;NF 3 / AR等离子体;过程简化; </div> </li> </ul> </div> </div> <div class="literature cardcommon"> <div class="similarity "> <h3 class="all_title" id="enpatent66">相似文献</h3> <div class="similaritytab clearfix"> <ul> <li class="active" >外文文献</li> <li >专利</li> </ul> </div> <div class="similarity_details"> <ul > <li> <div> <b>1. </b><a class="enjiyixqcontent" href="/journal-foreign-detail/0704024604723.html">A novel silicon heterojunction IBC process flow using partial etching of doped a‐Si:H to switch from hole contact to electron contact in situ with efficiencies close to 23%</a> <b>[J]</b> . <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Sivaramakrishnan Radhakrishnan Hariharsudan&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">Sivaramakrishnan Radhakrishnan Hariharsudan,</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Uddin M.D. Gius&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">Uddin M.D. 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F.&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">Davis, R. F.,</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Palmour, J. W.&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">Palmour, J. W. </a> <span>1990</span> </span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：碳化硅中掺杂层，触点和相关电子器件的持续发展和表征</span> </p> </li> </ul> <ul style="display: none;"> <li> <div> <b>1. </b><a class="enjiyixqcontent" href="/patent-detail/06130461334479.html">Storage cell capacitors prodn. for DRAM technology - by forming capacitor electrode contact hole, depositing doped poly-silicon@ layer, depositing silicon nitride, poly-silicon@ and silica layers, etching,etc.</a> <b>[P]</b> . <span> 外国专利：  DE4237100A1 </span> <span> . 1993-05-13</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：蓄电池电容器产品用于DRAM技术-通过形成电容器电极接触孔，沉积掺杂的多晶硅层，沉积氮化硅，多晶硅和二氧化硅层，蚀刻等。 </span> </p> </li> <li> <div> <b>2. </b><a class="enjiyixqcontent" href="/patent-detail/06130443720918.html">Doping bit line contact holes comprises simultaneously opening contact holes in the cell field and also further contact holes in peripheral circuits of the chip, and carrying out unmasked n-type doping of all the contact holes</a> <b>[P]</b> . <span> 外国专利：  DE10121011A1 </span> <span> . 2002-11-14</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：掺杂位线接触孔包括同时在单元场中打开接触孔以及芯片的外围电路中的另外的接触孔，并对所有接触孔进行未掩盖的n型掺杂 </span> </p> </li> <li> <div> <b>3. </b><a class="enjiyixqcontent" href="/patent-detail/06130412053502.html">Back side contacted wafer-based solar cells with in-situ doped crystallized thin-film silicon and/or silicon oxide regions.</a> <b>[P]</b> . <span> 外国专利：  NL2013722B1 </span> <span> . 2016-10-04</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：背面接触的是基于晶片的太阳能电池，该电池具有原位掺杂的结晶薄膜硅和/或氧化硅区域。 </span> </p> </li> </ul> </div> </div> </div> <div class="theme cardcommon" style="overflow: auto;display:none"> <h3 class="all_title" id="enpatent55">相关主题</h3> <ul id="subject"> </ul> </div> </div> </div> </div> <div class="right rightcon"> <div class="details_img cardcommon clearfix" style="margin-bottom: 10px;display:none;" > </div> </div> </div> <div id="thesis_get_original1" class="downloadBth" style="bottom: 19px;z-index: 999;" onclick="ywcd('0704024604723','4',7,2,1,'',this,24)" class="delivery" prompt="010401" title="通过人工服务将文献原文发送至邮箱" >获取原文</div> <div class="journalsub-pop-up" style="display: none"> <div class="journal-sub"> <h2>期刊订阅</h2> <img src="https://cdn.zhangqiaokeyan.com/img/loginclose.png" alt="关闭" onclick="$('.journalsub-pop-up').hide()"> <p class="pardon">抱歉，该期刊暂不可订阅，敬请期待！</p> <p class="current">目前支持订阅全部北京大学中文核心（2020）期刊目录。</p> <div style="display: flex;margin-top: 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