Modulating electro-absorption coefficient of impurity doped quantum dots driven by noise

摘要

Present study carries out an extensive inspection of the profiles of electro-absorption coefficient (EAC) of doped GaAs quantum dot (QD) under the control of Gaussian white noise. A large number of important physical parameters has been varied over a range and the consequent changes in the EAC profiles have been thoroughly scrutinized. The said physical parameters comprise of electric field, magnetic field, confinement potential, do pant location, dopant potential, noise strength, aluminium concentration (only for AlxGa1-xAs alloy QD), carrier density, relaxation time, position-dependent effective mass (PDEM), position-dependent dielectric screening function (PDDSF), anisotropy, hydrostatic pressure (HP) and temperature. The particular physical quantity being varied, presence of noise and its pathway of application, together, lead to the appearance of diverse features in the EAC profiles. As a technologically meaningful aspect we often find maximization of EAC for some typical combinations as mentioned above. Presence of multiplicative noise, quite often, causes greater departure and greater suppression of EAC profiles from a noise-free condition than its additive counterpart. The outcomes of the study indicate prolific scope of harnessing EAC of doped QD systems in presence of noise by delicate adjustment of several control parameters.