Improved Absorbance and Near-Infrared Dispersion of AuGe Nanoparticles over Au Nanoparticles Prepared with Similar Thermal Annealing Environment

摘要

The difficulty in patterning the structures at sub-wavelength range leads to employ the bottom-up approach to form nanostructures of metals as well as dielectric components that disperse them in host media. The optical properties of nanoparticles are studied with UV-Vis 750 (lambda) NIR spectroscopy and fit with empirical relations. The refractive index is about the volume fraction of particles. The AuGe nanoparticles demonstrate improved absorbance, lower refractive index, and higher extinction than Au nanoparticles formed with similar thermal process. Surface plasmon resonance (SPR) phenomena are highly sensitive to the bonding between atoms, atomic structure, and the electronic configuration in atoms of the given material. If one takes into account the structure of materials, then the literature on eutectic alloys predicts that alloying gold with germanium (AuGe) with varying compositions will also change the x-ray diffraction peak positions of gold itself. The peak shift can be interpreted as the change in grain size or shift in grain boundaries implying a corresponding change in material's atomic arrangement within lattice structure. As a result, there will be a change in the charge distribution of free electron cloud in original gold ultimately affecting a change in the plasmon resonance frequency and thereby modulating the various optical phenomena such as absorbance, reflectance, and refractive index. This alloying also brings a change in the dielectric constant of the material such that the plasmonic behavior may shift among different regions (UV, visible, NIR, MWIR, and LWIR). Metal semiconductor eutectic alloy which is widely popular as a soldering material would have scope in futuristic photonic applications due to its tuneable optical properties. In this work, we study the effects of Au and AuGe nanoparticle deposition on GaAs films grown by molecular beam epitaxy (MBE). Au and AuGe thin films (12-nm thick) were annealed in the temperature ranges of 400