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Experimental investigation of standing wave effect in dual-frequency capacitively coupled argon discharges: role of a low-frequency source

机译:双频电容耦合氩气排放站立波效应的实验研究:低频源的作用

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It is well known that the plasma non-uniformity caused by the standing wave effect has brought about great challenges for plasma material processing. To improve the plasma uniformity, a lowfrequency (LF) power source is introduced into a 100 MHz very-high-frequency (VHF) capacitively coupled argon plasma reactor. The effect of the LF parameters (LF voltage amplitude fL and LF source fL) on the radial profile of plasma density has been investigated by utilizing a hairpin probe. The result at a low pressure (1 Pa) is compared to the one obtained by a 2D fluid-analytical capacitively coupled plasma model, showing good agreement in the plasma density radial profile. The experimental results show that the plasma density profile exhibits different dependences on fL and fL at different gas pressures/electrode driven types (i.e., the two rf sources are applied on one electrode (case I) and separate electrodes (case II)). At low pressures (e.g., 8 Pa), the pronounced standing wave effect revealed in a VHF discharge can be suppressed at a relatively high fL or a low fL in case I, because the HF sheath heating is largely weakened due to strong modulation by the LF source. By contrast, fL and fL play insignificant roles in suppressing the standing wave effect in case II. At high pressures (e.g., 20 Pa), the opposite is true. The plasma density radial profile is more sensitive to fL and fL in case II than in case I. In case II, the standing wave effect is surprisingly enhanced with increasing fL at higher pressures; however, the center-high density profile caused by the standing wave effect can be compensated by increasing fL due to the enhanced electrostatic edge effect dominated by the LF source. In contrast, the density radial profile shows a much weaker dependence on fL and fL in case I at higher pressures. To understand the different roles of fL and fL, the electron excitation dynamics in each case are analyzed based on the measured spatio-temporal distributions of the elec
机译:众所周知,由驻波效应引起的等离子体不均匀性带来了等离子体材料加工的巨大挑战。为了提高等离子体均匀性,低频(LF)电源被引入100MHz非常高(VHF)电容耦合氩等离子体反应器中。通过利用发夹探针研究了LF参数(LF电压幅度F1和LF源FL)对等离子体密度的径向轮廓的影响。将低压(1Pa)的结果与由2D流体分析电容耦合等离子体模型获得的结果进行比较,在等离子体密度径向轮廓中显示出良好的一致性。实验结果表明,等离子体密度分布在不同的气压/电极驱动类型(即,两个电极(壳体I)和单独的电极(壳体II)上施加两个RF源和单独的电极(壳体II))上的不同依赖性。在低压(例如,8Pa)中,在VHF放电中显示的明显驻波效果可以在壳体中抑制在相对高的FL或低流体中,因为HF护套加热由于通过强烈调制而大大减弱lf源。相比之下,FL和FL起抑制壳体II中的驻波效果的微不足道的作用。在高压(例如,20 pa),相反是真的。在II的情况下,等离子体密度径向轮廓比在II的情况下更敏感。在II中,在较高压力下,常设波效果令人惊讶地增强;然而,由驻波效果引起的中心高密度曲线可以通过增加由LF源主导的增强的静电边缘效应增加来补偿。相反,密度径向轮廓显示出在较高压力下的情况下对FL和FL的依赖性较弱。为了了解FL和FL的不同作用,基于ELEC的测量的时空分布分析了每种情况下的电子激发动态

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    Key Laboratory of Materials Modification by Laser Ion and Electron Beams (Ministry of Education) School of Physics Dalian University of Technology Dalian 116024 People?s Republic of China;

    Key Laboratory of Materials Modification by Laser Ion and Electron Beams (Ministry of Education) School of Physics Dalian University of Technology Dalian 116024 People?s Republic of China;

    Department of Electrical Engineering University of California Berkeley California 94720 United States of America;

    Key Laboratory of Materials Modification by Laser Ion and Electron Beams (Ministry of Education) School of Physics Dalian University of Technology Dalian 116024 People?s Republic of China;

    Department of Electrical Engineering University of California Berkeley California 94720 United States of America;

    Key Laboratory of Materials Modification by Laser Ion and Electron Beams (Ministry of Education) School of Physics Dalian University of Technology Dalian 116024 People?s Republic of China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 等离子体物理学;
  • 关键词

    capacitively coupled plasmas; dual-frequency; standing wave effect; uniformity; PROES;

    机译:电容耦合等离子体;双频;常设波效应;均匀性;PROES;

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