首页> 外文期刊>Physics of the solid state >Structure and stability of defective silicene on Ag(001) and Ag(111) substrates: A computer experiment
【24h】

Structure and stability of defective silicene on Ag(001) and Ag(111) substrates: A computer experiment

机译:Ag(001)和Ag(111)基板上有缺陷硅的结构和稳定性:计算机实验

获取原文
获取原文并翻译 | 示例
           

摘要

The structure and stability of a two-layer defective silicene on Ag(001) and Ag(111) substrates have been investigated using the molecular dynamics method. The transformation of the radial distribution function of silicene due to the formation of monovacancies, divacancies, trivacancies, and hexavacancies is reduced primarily to a decrease in the intensity of the peaks and the disappearance of the "shoulder" in the second peak. With the passage of time, multivacancies can undergo coalescence with each other and the fragmentation into smaller vacancies, as well as form vacancy clusters. According to the geometric criterion, the Ag(001) substrate provides a higher stability of a perfect two-layer silicene. It has been found, however, that the defective silicene on this substrate has a lower energy only when it contains monovacancies and divacancies. A change in the size of defects leads to a change in the energy priority when choosing between the Ag(001) and Ag(111) substrates. The motion of a lithium ion inside an extended channel between two silicene sheets results in a further disordering of the defective structure of the silicene, during which the strongest stresses in the silicene are generated by forces directed perpendicular to the external electric field. These forces dominate in the silicene channel, the wall of which is supported by the Ag(001) or Ag(111) substrate.
机译:使用分子动力学方法研究了Ag(001)和Ag(111)衬底上的双层缺陷硅的结构和稳定性。由于单遗址,分布,琐事和六升性的形成,硅径向分布函数的转化主要减少到第二峰值中“肩部”的峰强度的降低和消失。随着时间的推移,多种遗址可以彼此进行聚结,并且将碎片化成更小的空位,以及形式空位簇。根据几何标准,Ag(001)衬底提供了完美的双层硅的稳定性。然而,已经发现,只有当它含有单遗址和小公开时,该基材上的缺陷硅均具有较低的能量。在选择Ag(001)和Ag(111)基板之间时,缺陷尺寸的变化导致能量优先级的变化。在两个硅片之间的延伸通道内的锂离子的运动导致硅缺陷结构的进一步紊乱,在此期间硅藻中的最强应力由垂直于外部电场的力产生。这些力在硅通道中占据主导地位,其壁由Ag(001)或Ag(111)衬底负载。

著录项

  • 来源
    《Physics of the solid state》 |2017年第6期|共11页
  • 作者单位

    Russian Acad Sci Ural Branch Inst High Temp Electrochem Ul Akad Skaya 20 Ekaterinburg 620137 Russia;

    Russian Acad Sci Ural Branch Inst High Temp Electrochem Ul Akad Skaya 20 Ekaterinburg 620137 Russia;

    Russian Acad Sci Ural Branch Inst High Temp Electrochem Ul Akad Skaya 20 Ekaterinburg 620137 Russia;

    Russian Acad Sci Ural Branch Inst High Temp Electrochem Ul Akad Skaya 20 Ekaterinburg 620137 Russia;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 固体物理学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号