首页> 外文期刊>Physica, E. Low-dimensional systems & nanostructures >Microstructure, optical and electrical characterizations of nanocrystalline ZnAl2O4 spinel synthesized by mechanical alloying: Effect of sintering on microstructure and properties
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Microstructure, optical and electrical characterizations of nanocrystalline ZnAl2O4 spinel synthesized by mechanical alloying: Effect of sintering on microstructure and properties

机译:机械合金化合成的纳米晶ZNAL2O4尖晶石的微观结构,光学和电气特性:烧结对微观结构和性能的影响

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摘要

Nanocrystalline ZnAl2O4 spinel compound has been synthesized by mechanical alloying the stoichiometric mixture of ZnO and alpha-Al2O3 powders. Required phase is initiated within 1 h of milling and nanocrystalline ZnAl2O4 mixed spinel phase has been obtained after 4 h of milling. Phase transformation from mixed spinel to normal spinel structure occurs through redistribution of cations in tetrahedral and octahedral void spaces after 5 h of sintering at 1173 K. Structure and microstructure characterizations of all milled samples have been carried out by analyzing the respective XRD patterns employing Rietveld's refinement method and HRTEM images. The optical band gap of semiconducting ZnAl2O4 is blue shifted due to the sintering effect. All synthesized samples exhibit PL emissions primarily within the UV region. Both the dc and ac electrical conduction mechanisms have been explained respectively by the hopping transport phenomenon and frequency dependent conductivity behaviour, which obeys the Jonscher power law. A better optical property, enhanced electrical conductivity and low dielectric constant value make the synthesized semiconducting ZnAl2 O-4 compound suitable for optoelectronic applications.
机译:通过机械合金化的ZnO和α-Al2O3粉末的化学计量混合物合成纳米晶Znal2O4尖晶石化合物。在铣削4小时后获得了所需的相,在铣削和纳米晶ZNAL2O4混合尖晶石相中获得。通过在1173k的烧结5小时之后,通过在烧结5小时之后的四面体和八面体空隙空间中的阳离子的再分布来发生相变。通过分析采用Rietveld的改进的相应的XRD图案,进行了所有研磨样品的结构和微观结构表征。方法和HRTEM图像。由于烧结效应,半导体Znal2O4的光学带隙是蓝色偏移。所有合成样本均主要在紫外线区域内表现出PL发射。通过跳跃传输现象和频率依赖的电导行为分别解释了DC和AC电导机的频率传导机制,该行为遵守Jonscher Power Law。更好的光学性能,增强的导电性和低介电常数,使得合成的半导体ZNAL2 O-4化合物适用于光电应用。

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