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First-principles analysis of ferromagnetic properties of molybdenum-doped wide-band-gap oxides

机译:钼掺杂宽带间隙氧化物铁磁性特性的第一原理分析

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The possibility of ferromagnetic ordering in four different Mo-doped oxide semiconductors has been studied theoretically using density functional theory. All four systems, namely Mo-doped TiO2, SnO2, MgO and ZnO, show energetically stable ferromagnetic ordering. In addition, the Mo-doped MgO system shows half-metallic ferromagnetism. From magnetic density calculations, it has been found that for all systems, the 4d electrons of the dopant Mo atoms are the main source of magnetism. Bader analysis shows a higher positive charge on Mo in the case of TiO2 and SnO2 compared to MgO and ZnO.
机译:从理论上使用密度泛函理论研究了四种不同的Mo掺杂的氧化物半导体中铁磁排序的可能性。 所有四种系统,即Mo-Doped TiO2,SnO2,MgO和ZnO,表现出高度稳定的铁磁排序。 此外,Mo掺杂的MgO系统显示半金属铁磁性。 从磁性密度计算,已经发现,对于所有系统,掺杂剂Mo原子的4D电子是磁性的主要来源。 与MgO和ZnO相比,獾分析显示了在TiO2和SnO2的情况下对Mo的较高的正电荷。

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