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Quantitative analysis of meandering and dimensional crossover of conduction path in 3D disordered media by percolation modeling

机译:渗透建模在3D无序介质中传导路径的蜿蜒尺寸交叉的定量分析

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Conduction in disordered media has been the subject of interest in applications and basic research. Percolation theory is used to study conduction, and mean-field theory has been used to describe macroscopic conduction. However, such an approximation theory cannot provide specific insights into the local limiting factors of conduction. In this study, a finite element simulation based on the site percolation model is used to investigate the effect of microstructural defects in materials on transport current. Statistical analysis of the local current obtained by the simulation experiment shows that the meandering of the transport current because of the disturbance of the current path increases as the concentration of defects increases, thus observing a dimensional crossover of the transport current from 1D to 3D. ?, which represents the degree of current meandering, has a value of 5.3 in the vicinity of the singularity of the percolation threshold (P-c). The governing mechanisms of the transport current differ depending on the concentration and correlation of defects. The main limiting factors of the transport current are the following: 'shadow effect' derived from isolated defects in the quasi-1D region where the defects are dilute; the meandering of the current path including the reverse current in the 3D region where the defects are highly concentrated and begin to correlate. These results can be used to understand the current limiting mechanisms in 3D polycrystalline superconducting materials and are expected to provide guidelines for controlling complex microstructures in iron-based superconductors, MgB2, and BSCCO.
机译:在无序媒体中的传导一直是应用兴趣和基础研究的主题。渗滤理论用于研究传导,并且用于描述宏观传导的平均场理论。然而,这种近似理论不能提供对导通的局部限制因素的特定见解。在该研究中,基于位点渗透模型的有限元模拟用于研究微观结构缺陷在输运电流上的影响。通过模拟实验获得的局部电流的统计分析表明,由于缺陷的浓度增加,因此由于电流路径的干扰而导致的传输电流的曲折增加,从而观察到从1D到3D的传输电流的尺寸交叉。 ?表示电流曲折的程度,在渗透阈值(P-C)的奇点附近的值为5.3。传输电流的控制机制根据缺陷的浓度和相关性而不同。运输电流的主要限制因素是以下:“暗影效应”从稀释缺陷的准1D区域中源自分离的缺陷;包括缺陷高度集中的3D区域中的电流路径的曲折,包括缺陷并开始相关。这些结果可用于了解3D多晶超导材料中的限流机制,并且预期提供用于控制铁基超导,MGB2和BSCCO中复杂微观结构的指导。

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