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首页> 外文期刊>Solid state sciences >A comparison study of the Born effective charges and dielectric properties of the cubic, tetragonal, monoclinic, ortho-I, ortho-II and ortho-III phases of zirconia
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A comparison study of the Born effective charges and dielectric properties of the cubic, tetragonal, monoclinic, ortho-I, ortho-II and ortho-III phases of zirconia

机译:立方,四方,单岩,邻酮,γ-II和γ-III阶段的出生生效电荷和介电性能的比较研究

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摘要

Using density-functional perturbation theory, we systematically investigate the Born effective charges and dielectric properties of cubic, tetragonal, monoclinic, ortho-I (Pbca), ortho-II (Pnma) and ortho-III (Pca21) phases of ZrO2. The magnitudes of the Born effective charges of the Zr and oxygen atoms are greater than their nominal ionic valences (+4 for Zr and ?2 for oxygen), indicating a strong dynamic charge transfer from Zr atoms to O atoms and a mixed covalent-ionic bonding in six phases of ZrO2. For all six phases of ZrO2, the electronic contributionsεij∞to the static dielectric constant are rather small (range from 5 to 6.5) and neither strongly anisotropic nor strongly dependent on the structural phase, while the ionic contributionsεijionto the static dielectric constant are large and not only anisotropic but also dependent on the structural phase. The average dielectric constantεˉ0of the six ZrO2phases decreases in the sequence of tetragonal, cubic, ortho-II (Pnma), ortho-I (Pbca), ortho-III (Pca21) and monoclinic. So among six phases of ZrO2, the tetragonal and cubic phases are two suitable phases to replace SiO2as the gate dielectric material in modern integrated-circuit technology. Furthermore, for the tetragonal ZrO2the best orientation is [100].
机译:利用密度函数扰动理论,我们系统地研究了立方,四方,单岩,官能-1(PBCA),γ-II(PNMA)和γ-III(PCA21)阶段的ZrO2的出生有效电荷和介电性质。 Zr和氧原子的出生有效电荷的幅度大于其标称离子效果(Zr和氧气的+ 4),表明从Zr原子与O原子和混合的共价离子的强力电荷转移在ZrO2的六个阶段键合。对于ZrO2的所有六个阶段,电子贡献将静态介电常数相当小(范围为5至6.5),并且既不是强大的各向异性也不依赖于结构阶段,而离子贡献静电介电常数是大而不是只有各向异性但也依赖于结构阶段。六个ZrO2phase的平均介电常数εί0在四方,立方,官能-II-II(PNMA),ortho-1(PBCA),ortho-III(PCA21)和单斜视的序列中降低。因此,在ZrO2的六个阶段中,四方和立方相是替换SiO2AS在现代集成电路技术中的栅极介电材料的两个合适相。此外,对于四方ZrO2,最佳取向是[100]。

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