Effects of substrate temperature and SnO2 high resistive layer on Sb2Se3 thin film solar cells prepared by pulsed laser deposition

摘要

Sb2Se3, an emerging promising binary compound semiconductor, was prepared at different substrate temperatures by pulsed laser deposition for thin film solar cells for the first time. In this work, CdS and Sb(2)Se(3 )films were subsequently deposited by pulsed laser deposition to simplify the process. Film properties and device performance, closely related to the substrate temperature, were characterized by thermal gravimetric analysis, X-ray diffraction, UV-Vis-NIR spectrophotometer, scanning electron microscope, light and dark current density-voltage, external quantum efficiency and capacitance-voltage, respectively. Results indicate that Sb2Se3 solar cells film deposited at 500 degrees C is better, with a better efficiency of 3.58%. Furthermore, SnO2 high resistive layer was introduced into Sb2Se3 solar cell to improve the junction quality, leading to a champion device efficiency of 4.41%.