Large-Area Processing of Solution Type Metal-Oxide in TFT Backplanes and Integration in Highly Stable OLED Displays

摘要

Solution type metal-oxide semiconductor was processed on mass-production ready equipment and integrated in a backplane with ESL architecture TFTs. Excellent thickness uniformity of the semiconductor layer was obtained over the complete Gen1 glass substrate (320 mm × 352 mm), resulting in homogeneous TFT performance and bias stress reliability. An 85-ppi QVGA AMOLED display is demonstrated.