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Calculation of thermal quenching parameters in BeO ceramics using solely TL measurements

机译:用TL测量计算BEO陶瓷热淬火参数

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摘要

The decrease of the luminescence efficiency with increasing temperature is known as the thermal quenching effect. Various materials exhibit thermal quenching, among which quartz and Al2O3:C stand as the mostly well known. BeO, which is used generally as OSL dosimeter, has been reported to undergo thermal quenching effect; so far in the literature only one thermal quenching parameter was determined using various OSL techniques. This study is the first attempt in the literature to calculate both W and C thermal quenching parameters. TL glow curves of BeO ceramic chips were studied as a function of heating rates ranging between 0.25 K/s and 8 K/s. The procedure of analysis includes various steps dealing with de convolution of the quenched TL glow curves, correction for temperature lag, evaluation of the experimental thermal quenching parameter values, reconstruction as well as de-convolution of the reconstructed TL glow curves. The reconstruction step is really important, while its aim is twofold: (a) to provide the most stringent criterion for selecting the physically meaningful W,C values for BeO and (b) to check the kinetic parameters of the unquenched glow curve. The first peak of BeO is not affected by the thermal quenching, while both second and third peaks suffer from thermal quenching. Wand C parameters were determined as 0.54-0.66 (+/- 0.07) eV . 10(5)-2.4 . 10(6) (+/- 4 . 10(5)) for peak 2 and 0.74-0.86 eV and 2.8 . 10(6)-2.1 . 10(7) for peak 3 respectively for U-340 filter by using indirect fit method. The same process was applied for BG-39 filter and W and C parameters were compared to those found through U-340 filter. The values for the main dosimetric peak 2, are independent on the detection filter used, as well as in great agreement with the W values previously reported in the literature. The difference in the W, C parameters for those two peaks in BeO provide a strong argument to the fact that each one of these two peaks uses different recombination centers. According to the results of the de-convolution before and after the reconstruction, it is indicated that the influence of the thermal quenching is mainly reflected to the value of the activation energy for the case of peak 3, which is under-estimated without reconstruction. (C) 2017 Elsevier Ltd. All rights reserved.
机译:随着温度的增加,发光效率的降低被称为热淬火效果。各种材料表现出热淬火,其中石英和Al2O3:C作为主要是众所周知的。据报道,BEO,其通常用作OSL剂量计,以进行热淬火效果;到目前为止,在文献中,使用各种OSL技术确定一个热淬火参数。本研究是第一次尝试计算W和C热淬火参数。研究了BEO陶瓷芯片的TL发光曲线,作为加热速率范围在0.25k / s和8k / s之间的函数。分析程序包括处理淬火的TL发光曲线的DE卷积的各种步骤,温度滞后的校正,实验热淬火参数值的评估,重建的TL发光曲线的重建以及脱卷。重建步骤非常重要,而其目的是双重的:(a)提供最严格的标准,用于选择Beo和(b)的物理有意义的w,c值,以检查未通电的发光曲线的动力学参数。蜜蜂的第一峰不受热淬火的影响,而第二和第三峰值遭受热淬火。棒C参数确定为0.54-0.66(+/- 0.07)EV。 10(5)-2.4。 10(6)(+/- 4. 10(5))峰值2和0.74-0.86 EV和2.8。 10(6)-2.1。 10(7)通过使用间接拟合法分别用于U-340滤波器的峰值3。将BG-39滤波器应用相同的方法,并将W和C参数与通过U-340滤波器进行比较。主编码峰2的值是独立于所用的检测滤波器,以及与先前在文献中报告的W值非常一致的。 Beo中那些两个峰的W,C参数的差异为这两个峰的每一个使用不同的重组中心提供了强烈的论据。根据在重建之前和之后的去卷积的结果,表明热猝灭的影响主要反映在峰值3的情况下的激活能量的值,这在不重建的情况下估计。 (c)2017 Elsevier Ltd.保留所有权利。

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