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3D-fibre channels in silicon by electrical breakdown - New opportunities for optical fibre alignment and microfluidics

机译:电击穿硅中的3D光纤通道-光纤对准和微流体技术的新机遇

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摘要

Very precise 3D fibre channels are fabricated by defined electrical breakdown in crystalline silicon followed by wet anisotropic etching in KOH: it is an extension of the well-known V-grooves that are already extensively used in fibre assembly. It allows to integrate large 2D-arrays of precisely aligned fibres in {110}-silicon or to adjust four fibres in a pyramid-shaped configuration into {100}-silicon in such a way that they all meet in a single point. The fabrication technology is presented and possible applications are described. (c) 2007 Elsevier GmbH. All rights reserved.
机译:通过在结晶硅中进行明确的电击穿,然后在KOH中进行湿法各向异性蚀刻,可以制造出非常精确的3D光纤通道:这是已经广泛用于光纤组件中的著名V型槽的扩展。它允许将精确对准的光纤的大型2D阵列集成在{110}-硅中,或将金字塔形配置中的四根光纤调整到{100}-硅中,以使它们都在一个点处汇合。介绍了制造技术并描述了可能的应用。 (c)2007 Elsevier GmbH。版权所有。

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