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In situ interface engineering for probing the limit of quantum dot photovoltaic devices

机译:在探测量子点光伏器件极限的原位界面工程

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摘要

Quantum dot (QD) photovoltaic devices are attractive for their low-cost synthesis, tunable band gap and potentially high power conversion efficiency (PCE). However, the experimentally achieved efficiency to date remains far from ideal. Here, we report an in-situ fabrication and investigation of single TiO2-nanowire/CdSe-QD heterojunction solar cell (QDHSC) using a custom-designed photoelectric transmission electron microscope (TEM) holder. A mobile counter electrode is used to precisely tune the interface area for in situ photoelectrical measurements, which reveals a strong interface area dependent PCE. Theoretical simulations show that the simplified single nanowire solar cell structure can minimize the interface area and associated charge scattering to enable an efficient charge collection. Additionally, the optical antenna effect of nanowire-based QDHSCs can further enhance the absorption and boost the PCE. This study establishes a robust 'nanolab' platform in a TEM for in situ photoelectrical studies and provides valuable insight into the interfacial effects in nanoscale solar cells.
机译:量子点(QD)光伏器件对于它们的低成本合成,可调谐带隙和潜在的高功率转换效率(PCE)具有吸引力。然而,实验达到迄今为止的效率仍然远非理想。在这里,我们通过定制设计的光电透射电子显微镜(TEM)保持器来报告单一TiO2-纳米线/ Cdse-QD异质结太阳能电池(QDHSC)的原位制造和研究。移动计数器电极用于精确调谐界面区域,用于原位光电测量,这揭示了强大的接口区域相关的PCE。理论模拟表明,简化的单个纳米线太阳能电池结构可以最小化接口区域和相关电荷散射,以实现有效的充电收集。另外,基于纳米线的QDHSC的光天线效应可以进一步增强吸收并提高PCE。该研究在TEM中建立了一个强大的“纳米纳米”平台,用于原位光电研究,并提供对纳米级太阳能电池的界面效应的宝贵洞察。

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  • 来源
    《Nature nanotechnology》 |2019年第10期|共8页
  • 作者单位

    Southeast Univ SEU FEI Nanopico Ctr Key Lab MEMS Minist Educ Collaborat Innovat Ctr Micro Nano Fabricat Device Nanjing Jiangsu Peoples R China;

    Southeast Univ SEU FEI Nanopico Ctr Key Lab MEMS Minist Educ Collaborat Innovat Ctr Micro Nano Fabricat Device Nanjing Jiangsu Peoples R China;

    Queensland Univ Technol Sch Chem Phys &

    Mech Engn Brisbane Qld Australia;

    East China Normal Univ Dept Elect Engn Shanghai Peoples R China;

    Southeast Univ SEU FEI Nanopico Ctr Key Lab MEMS Minist Educ Collaborat Innovat Ctr Micro Nano Fabricat Device Nanjing Jiangsu Peoples R China;

    Southeast Univ Sch Elect Sci &

    Engn Joint Int Res Lab Informat Display &

    Visualizat Nanjing Peoples R China;

    Southeast Univ SEU FEI Nanopico Ctr Key Lab MEMS Minist Educ Collaborat Innovat Ctr Micro Nano Fabricat Device Nanjing Jiangsu Peoples R China;

    Southeast Univ SEU FEI Nanopico Ctr Key Lab MEMS Minist Educ Collaborat Innovat Ctr Micro Nano Fabricat Device Nanjing Jiangsu Peoples R China;

    Southeast Univ SEU FEI Nanopico Ctr Key Lab MEMS Minist Educ Collaborat Innovat Ctr Micro Nano Fabricat Device Nanjing Jiangsu Peoples R China;

    Zhejiang Univ Dept Mat Sci &

    Engn State Key Lab Silicon Mat Hangzhou Zhejiang Peoples R China;

    Univ Calif Los Angeles Dept Chem &

    Biochem Calif NanoSyst Inst 405 Hilgard Ave Los Angeles CA 90024 USA;

    Southeast Univ SEU FEI Nanopico Ctr Key Lab MEMS Minist Educ Collaborat Innovat Ctr Micro Nano Fabricat Device Nanjing Jiangsu Peoples R China;

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  • 正文语种 eng
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