Moisture-powered memristor with interfacial oxygen migration for power-free reading of multiple memory states

摘要

Self-powered memristors have the potential capability to promote highly efficient memory and neuromorphic computing, allowing the exploration of power-free electronics for future. The present study developed a novel moisture-powered memristor, having a multi-layer structure of W/WOx/oxygen-plasma-treated amorphouscarbon (OAC)/Pt. The reversible oxygen migration across the WOx/OAC interface formed between the memristor layer and the nanogenerator layer occurs in this integrated device, which allows simultaneous modulation of resistance state and open circuit voltage (V-oc). This device not only presented the reversible characteristics of resistive switching and moisture-powered reading through human breath, but also further demonstrated the capability of the selective reading of multiple memory states for the first time. Cross-sectional transmission electron microscopy observations provided solid evidence of the important role of interfacial oxygen migration, accounting for the mechanism of V-oc modulation and resistive switching. This work provides a feasible strategy to build up the self-powered memristor for constructing highly efficient memristive neural networks.