Thin-film thermoelectric device of semimetals p-Sn0.9Yb0.1Te: Te and n-Sn0.9Yb0.1Te for power generation using thermal evaporation

摘要

We utilized p-Sn0.9Yb0.1Te:Te and n-Sn0.9Yb0.1Te powders to fabricate thermally evaporated thin films by standard synthesised solid-state microwave method. X-ray diffraction and field emission scanning electron microscopy were used to investigate the composition and microstructure of the films. The asdeposited films were also electrically characterized in terms of Seebeck coefficient, electrical conductivity and thermoelectric (TE) power factor at a range of 298-523 K. The micro-TE device consisted of 20 pairs of p-Sn0.9Yb0.1Te:Te and n-Sn0.9Yb0.1Te thin films on glass substrate. The dimensions of the thin-film TE generator, which comprised 20 pairs of legs connected by aluminium electrodes, were 23 mm x 20 mm. The p-n thermocouples in series generated a maximum open-circuit voltage output of 823.7 mV and a maximum output power of 0.259 mu W at a temperature difference of 180 K and the hot-side temperature (T-h) of 528 K. (C) 2018 Elsevier Ltd. All rights reserved.