Preparation and Characterization of Bi_2Te_3/Sb_2Te_3 Thermoelectric Thin-Film Devices for Power Generation

摘要

A device based on a new double-layer-leg thin-film concept has been successfully fabricated by flip-chip bonding of 242 pairs of n-type Bi_2Te_3 and p-type Sb_2Te_3 thin-film legs electrodeposited on top substrates to those processed on bottom substrates. Based on the output voltage-current curve, the internal resistance of the double-layer-leg thin-film device was measured to be 3.47 kΩ at an apparent temperature difference of 25.9 K across the device. The actual temperature difference across the thin-film legs was estimated to be 3.51 K, which is ～13% of the apparent temperature difference ΔT of 25.9 K applied across the thin-film device. The double-layer-leg thin-film device exhibited an open-circuit voltage of 0.43 V and maximum output power of 13.1 μW at an apparent temperature difference ΔT of 25.9 K.