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Large-scale phase-field simulation of three-dimensional isotropic grain growth in polycrystalline thin films

机译:多晶薄膜三维各向同性晶粒生长的大规模相场模拟

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In this study, assuming an ideal system free from thermal grooving and anisotropy in grain boundary properties, we analyze thin-film grain growth via three-dimensional (3D) phase-field simulations with approximately one million initial grains. The large-scale simulations accelerated by multiple graphics processing units allow for the reliable statistical investigation of grain growth behaviors in films with various thickness. Over the transition from 3D to two-dimensional (2D) growth modes, variations in the averages and distributions of grain sizes are quantified and compared for different regions of the films. Furthermore, we propose a comprehensive scaling law of thin-film grain growth, by which the 3D-2D transition behaviors and grain growth kinetics can be described in a unified manner independent of film thickness.
机译:在该研究中,假设没有晶粒边界特性的热槽和各向异性的理想系统,我们通过三维(3D)相场模拟分析薄膜晶粒生长,其中三维初始颗粒约100万粒。 通过多种图形处理单元加速的大规模模拟允许具有各种厚度的薄膜中的晶粒生长行为的可靠统计研究。 在从3D到二维(2D)生长模式的过渡,量化晶粒尺寸的平均值和分布的变化并比较薄膜的不同区域。 此外,我们提出了薄膜晶粒生长的综合缩放规律,通过该缩放规律,可以以统一的方式描述3D-2D过渡行为和晶粒生长动力学,与膜厚度无关。

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