机译:电气掺杂二氧化硅光纤的电子和光学性能
Beijing Univ Posts &
Telecommun State Key Lab Informat Photon &
Opt Commun Beijing 100876 Peoples R China;
Beijing Univ Posts &
Telecommun State Key Lab Informat Photon &
Opt Commun Beijing 100876 Peoples R China;
Beijing Univ Posts &
Telecommun State Key Lab Informat Photon &
Opt Commun Beijing 100876 Peoples R China;
Beijing Univ Posts &
Telecommun State Key Lab Informat Photon &
Opt Commun Beijing 100876 Peoples R China;
Beijing Univ Posts &
Telecommun State Key Lab Informat Photon &
Opt Commun Beijing 100876 Peoples R China;
Univ New South Wales Sch Elect Engn &
Telecommun Sydney NSW 2052 Australia;
Sichuan Univ Coll Elect Engn &
Informat Technol Chengdu 610065 Sichuan Peoples R China;
Beijing Univ Posts &
Telecommun State Key Lab Informat Photon &
Opt Commun Beijing 100876 Peoples R China;
First-principle; Ge-doped silica; Si-Ge-Si defect; membered ring; absorption peak;
机译:电气掺杂二氧化硅光纤的电子和光学性能
机译:在脉冲X射线照射下纯二氧化硅芯和Ge掺杂光纤中辐射诱导的衰减的起源
机译:纯和掺Ge的二氧化硅玻璃中缺氧中心的从头算分子动力学模拟:结构和光学性质
机译:光敏性在掺Ge硅石中的新应用:布拉格光栅匹配滤波,用于光纤色散补偿和多层光存储介质
机译:开发用于光纤的稀土离子活化的二氧化硅预成型件的新掺杂原理,并研究其光谱性质。
机译:基于PPP-BOTDA的熔融石英单模光纤在高温领域的传感性能
机译:双掺杂二氧化硅光纤光学性能的辐射效应