The RF-heated float zone method has been used to study the segregation behaviour of silicon-germanium solid solutions in the concentration range from 0 to 25 at% germanium. Completely dislocation free crystals up to 8 at% germanium could be obtained. Since constitutional supercooling is the main reason preventing single crystalline growth, pyrometric temperature measurements have been performed to reveal the temperature slops at the interface and to determine the critical growth rate. The temperature gradient Delta T/Delta z was found to increase with increasing germanium concentration. [References: 15]
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