...
首页> 外文期刊>CrystEngComm >Continuous formation of a seed layer and vertical ZnO nanowire arrays enabled by tailored reaction kinetics in a microreactor
【24h】

Continuous formation of a seed layer and vertical ZnO nanowire arrays enabled by tailored reaction kinetics in a microreactor

机译:通过微反应器中定制的反应动力学实现连续形成种子层和垂直ZnO纳米线阵列

获取原文
获取原文并翻译 | 示例

摘要

ZnO nanowires (NWs) are gaining widespread popularity due to their many unique physical and chemical properties. The hydrothermal process is the most commonly used approach to prepare vertical ZnO NW arrays. Its fundamental issues are the rather slow deposition rate and the variation of reactant concentrations as a function of time. In this study, we employed a continuous flow microreactor and deposition system to prepare both a ZnO seed layer and vertical ZnO NW arrays continuously by simply tuning the flow rate of reactant solutions. The change in flow rate allows reaction kinetics to be selectively tuned, resulting in the generation of molecular zinc species and colloidal ZnO nanocrystals at a high and low flow rate, respectively. The molecular zinc species constitute the seed layer at the high flow rate, and subsequently the colloidal ZnO nanocrystals contribute to the growth of ZnO NWs at the low flow rate. Since the direct delivery of the controlled building blocks on the substrate prevents the formation of homogeneously induced ZnO particles, we were able to obtain highly uniform ZnO NW arrays, with a growth rate as fast as 240 nm min(-1), which is significantly higher than typical growth rates from gas-phase or batch hydrothermal processes. Based on the growth mechanism study, the dimensions of the vertical ZnO NW arrays were varied, leading to an aspect ratio of the NWs up to 23. The advantages of our system were highlighted by preparing a high-quality heterogeneous surface having both hydrophilic and hydrophobic nature on one substrate. These results demonstrate the capability of the continuous flow microreactor and deposition system in efficiently preparing functional vertical ZnO NW arrays.
机译:ZnO纳米线(NWs)由于其许多独特的物理和化学特性而受到广泛欢迎。水热工艺是制备垂直ZnO NW阵列最常用的方法。其基本问题是沉积速度相当慢,反应物浓度随时间变化。在这项研究中,我们采用连续流微反应器和沉积系统,通过简单地调节反应物溶液的流速,连续制备ZnO种子层和垂直ZnO NW阵列。流速的变化使反应动力学得以选择性调节,从而分别以高流速和低流速产生分子锌物质和胶体ZnO纳米晶体。分子锌物质以高流速构成晶种层,随后,胶体状ZnO纳米晶体有助于低流速下ZnO NW的生长。由于将受控结构单元直接递送到基底上可防止均质诱导的ZnO颗粒的形成,因此我们能够获得高度均匀的ZnO NW阵列,其生长速度高达240 nm min(-1),这是非常明显的高于气相或间歇水热法的典型增长率。基于生长机理研究,垂直ZnO NW阵列的尺寸有所变化,从而使NW的长宽比高达23。通过制备高质量的具有亲水性和疏水性的异质表面,突出了我们系统的优势在一个基板上的自然。这些结果证明了连续流微反应器和沉积系统有效制备功能性垂直ZnO NW阵列的能力。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号