Growth of Bi_(12)GeO_(20) and Bi_(12)SiO _(20) crystals by the low-thermal gradient Czochralski technique

Shlegel V.N.; Pantsurkin D.S.

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Growth of Bi_(12)GeO_(20) and Bi_(12)SiO _(20) crystals by the low-thermal gradient Czochralski technique

机译：低热梯度直拉法生长Bi_（12）GeO_（20）和Bi_（12）SiO_（20）晶体

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Bi_(12)SiO_(20) crystals have been grown for the first time by the low-thermal gradient Czochralski technique in the <111> and <110> directions. The conditions for reproducible crystal growth with a high-quality polyhedral faceted front are found. The systematic features of shaping Bi_(12)SiO_(20) and Bi_(12)GeO_(20) crystals, grown by the low-thermal gradient Czochralski technique, are compared. The defect formation in these crystals is studied and their optical homogeneity is analyzed by interferometry.

机译：Bi_（12）SiO_（20）晶体是通过低热梯度直拉技术在<111>和<110>方向上首次生长的。找到了具有高质量多面多面正面的可再生晶体生长的条件。比较了通过低热梯度直拉法生长的Bi_（12）SiO_（20）和Bi_（12）GeO_（20）晶体的整形特征。研究了这些晶体中的缺陷形成，并通过干涉法分析了它们的光学均匀性。

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《Crystallography reports》 |2011年第2期|共6页
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Shlegel V.N.; Pantsurkin D.S.;
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正文语种 eng
中图分类晶体学;
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1. Growth of Bi_(12)GeO_(20) and Bi_(12)SiO _(20) crystals by the low-thermal gradient Czochralski technique [J] . Shlegel V.N., Pantsurkin D.S. Crystallography reports . 2011,第2期

机译：低热梯度直拉法生长Bi_（12）GeO_（20）和Bi_（12）SiO_（20）晶体
2. Growth and Optical Properties of Synthetic Opal Filled with Bi_(12)SiO_(20) and Bi_(12)GeO_(20) Nanocrystals [J] . V. S. Gorelik, G. I. Dovbeshko, A. V. Evchik, Inorganic materials . 2013,第8期

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3. Fiber-Optic Magnetic-Field and Electric-Current Sensors Based on the Faraday Effect in Bi_(12)GeO_(20) and Bi_(12)SiO_(20) Crystals [J] . A. V. Kukhta, A. M. Mamedov, V. T. Potapov, Journal of Communications Technology and Electronics . 2008,第3期

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4. Optical Activity and Faraday Rotation Around the Edge Absorption of the Crystals Bi_(12)SiO_(20) and Bi_(12)SiO_(20):M (M = Co, Fe) [C] . Todor Dimov, Ilia Iliev, Antonina Hristova Jubilee International Conference of the Balkan Physical Union . 2019

机译：光学活性和法拉第旋转晶体的边缘吸收晶体Bi_（12）SiO_（20）和Bi_（12）SiO_（20）：M（m = Co，Fe）
5. Electrical and optical characterization of defect levels in Bi(12)GeO(20) and Bi(12)SiO(20). [D] . Bloom, Danning Wilford. 1997

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7. Cathodoluminescence and photoluminescence in the core region of Bi_(12)GeO_(20) and Bi_(12)SiO_(20) crystals [O] . Cremades Rodríguez Ana Isabel, Santos M. T., Remon A., 1996

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8. Identification and Control of Gravity Related Defect Formation During Melt Growth of Electro-Optic Single Crystals Bismuth Silicate(Bi12SiO20) [R] . Becia, Piotr, Wiegel, Michaela E. K. 2004

机译：电光单晶硅酸铋（Bi12siO20）熔体生长过程中重力相关缺陷形成的识别与控制

Growth of Bi_(12)GeO_(20) and Bi_(12)SiO _(20) crystals by the low-thermal gradient Czochralski technique

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