Pulling CsI(Na) single crystals from melt by continuous method without plastic deformation

摘要

It is established that bromine impurity in CsI(Na) crystals not only facilitates the homogeneous incorporation of an activator into the lattice and prevents complex activator clusters from forming, but it also significantly hinders (at certain concentrations) the action of the primary and secondary dislocation slip systems. It is shown that the automatic pulling of large CsI-based crystals can be provided by the introduction of a single Br impurity into the charge; this impurity, to a large extent, strengthens only the top part of the crystal. The absence of plastic deformation in CsI-CsBr(Na) crystals with a diameter 300 mm and height h = 600 mm (grown by the continuous method) and 500 mm and h = 200 mm (grown by the automatic Kiropulos method) has been experimentally confirmed.