首页> 外文期刊>Microporous and mesoporous materials: The offical journal of the International Zeolite Association >Effect of Ge/Si substitutions on the local geometry of Si framework sites in zeolites: A combined high resolution Si-29 MAS NMR and DFT/MM study on zeolite Beta polymorph C (BEC)
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Effect of Ge/Si substitutions on the local geometry of Si framework sites in zeolites: A combined high resolution Si-29 MAS NMR and DFT/MM study on zeolite Beta polymorph C (BEC)

机译:GE / Si取代对沸石局部几何学几何学的影响:沸石β多晶型C(BEC)中的高分辨率Si-29mas NMR和DFT / MM研究

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We employed density functional theory/molecular mechanics (DFT/MM) calculations and Si-29 magic-angle spinning (MAS) NMR spectroscopy to investigate the effect of single and multiple Ge/Si substitutions on the Si-29 NMR parameters as well as the local geometry of SiO4 tetrahedra of the nearest (Ge-O-Si) and next-nearest (GeO-Si-O-Si) neighboring Si atoms. The influences of the Ge/Si substitutions are compared with the effects of the corresponding Al/Si substitutions (i.e., Al-O-Si and Al-O-Si-O-Si, respectively). Zeolite Beta polymorph C (BEC), containing double four-membered rings (D4Rs) and exhibiting three distinguishable T sites in the framework, was chosen for this study as a model of germanium containing zeolites. Our computations give a systematic downshift of the Si-29 chemical shift of Si by 1-6 ppm for Ge-O-Si sequences. Furthermore, the contributions of two, three, and four Ge atoms as the nearest neighbors to the downshift of Si are not additive and the calculated downshifts lie in the intervals from 2 to 6 ppm, from 1 to 9 ppm, and from 5 to 11 ppm, respectively. Conversely, the contributions of two, three, and four Al atoms as the nearest neighbors are approximately additive. The downshifts caused by Ge nearest neighbors are less than half compared with the corresponding downshifts caused by Al. Moreover, our calculations show that there are no systematic contributions of Ge and Al as next nearest neighbors (i.e., Ge-O-Si-O-Si and Al-O-Si-O-Si, respectively) to the Si-29 chemical shift of Si, and not even the direction (sign) can be predicted without calculating the corresponding sequence.
机译:我们使用密度函数理论/分子力学(DFT / mm)计算和Si-29魔法角纺丝(MAS)NMR光谱,以研究单一和多种GE / Si取代对Si-29 NMR参数的影响以及最近(GE-O-Si)和Next-Contact(Geo-Si-O-Si)的局部几何形状和相邻的Si原子。将Ge / Si取代的影响与相应的Al / Si取代(即,Al-O-Si和Al-O-Si-O-Si)进行比较。含有双四元环(D4R)的沸石β多晶型C(BEC)并选择框架中的三个可区别的T位点,作为含沸石的锗的模型。我们的计算为GE-O-Si序列提供了1-6ppm的Si-29化学偏移的系统性下降。此外,作为最接近邻居的Si的最近邻居的两个,三个和四个GE原子的贡献不是添加剂,并且计算出的降档位于2至6ppm的间隔,从1到9ppm,5到11 PPM分别。相反,作为最近邻居的两个,三个和四个Al原子的贡献大致添加。与由Al引起的相应的降档相比,由GE最近邻居引起的降档不到一半。此外,我们的计算表明,GE和AL作为下一个最近邻居(即,GE-O-Si-O-Si和Al-O-Si-O-Si)没有系统贡献,分别为Si-29化学品可以预测Si的偏移,而不是甚至方向(符号)而不计算相应的序列。

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