Comprehensive photoresponse study on high performance and flexible pi-SnS photodetector with near-infrared response

摘要

Tin sulfide (SnS) has attracted a great interest recently due to its high absorption coefficient (similar to 10(4)cm(-1)) facile deposition and low-cost. This research work consists on a comprehensive photoresponse investigation of flexible pi-SnS photodetector analyzed under illumination of near-infrared (NIR). The pi-SnS film has been deposited onto a flexible substrate polyethylene terephthalate (PET) via facile and relatively low-cost chemical bath deposition. The photoresponse characteristics are studied extensively at different bias voltages, various illumination power densities, and different bending angles. The as-fabricated photodetector shows an excellent stability and reproducibility characteristics as well as good photoresponse properties under light illumination of NIR (750 nm); i.e. sensitivity (1635), response time (0.55 s) and recovery time (0.53 s) at bias voltage 5 V. Based on the obtained exceptional characteristics, besides its flexibility, non-toxic nature and low-cost, the as-developed pi-SnS photodetector can be considered as a promising optoelectronic device in the range of NIR.