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机译:INAS / GASB芯壳纳米线结构的优化,提高TFET性能
Natl Chiao Tung Univ Dept Mat Sci &
Engn Hsinchu 30010 Taiwan;
Natl Chiao Tung Univ Dept Mat Sci &
Engn Hsinchu 30010 Taiwan;
SRM Inst Sci &
Technol Dept Phys &
Nanotechnol Chennai 603203 Tamil Nadu India;
IIT Delhi Ctr Appl Res Elect New Delhi 110016 India;
Natl Chiao Tung Univ Dept Mat Sci &
Engn Hsinchu 30010 Taiwan;
Natl Chiao Tung Univ Dept Mat Sci &
Engn Hsinchu 30010 Taiwan;
Natl Chiao Tung Univ Dept Mat Sci &
Engn Hsinchu 30010 Taiwan;
SRM Inst Sci &
Technol Dept Phys &
Nanotechnol Chennai 603203 Tamil Nadu India;
Natl Chiao Tung Univ Dept Mat Sci &
Engn Hsinchu 30010 Taiwan;
Core-shell; Nanowire; Subthreshold swing (SS); TFET;
机译:INAS / GASB芯壳纳米线结构的优化,提高TFET性能
机译:在INAS / GASB和GASB / INAS核心壳纳米线中的带倒置间隙
机译:从热电特性中提取GaSb / InAs核壳纳米线的能带结构特征
机译:用于数字和模拟应用的Si上的InAs / GaSb垂直纳米线TFET
机译:优化制造工艺以改善厚复合结构的失效性能。
机译:InAs / GaSb和GaSb / InAs核-壳纳米线的能带反转间隙
机译:[111]取向的Inas / Gasb和Gasb / Inas中的拓扑能隙 核壳纳米线