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首页> 外文期刊>Materials science in semiconductor processing >Improvement of charge transport for hydrothermally synthesized Cd0.8Fe0.2S over co-precipitation method: A comparative study of structural, optical and magnetic properties
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Improvement of charge transport for hydrothermally synthesized Cd0.8Fe0.2S over co-precipitation method: A comparative study of structural, optical and magnetic properties

机译:过沉淀法的水热合成CD0.8Fe0.2的电荷转运改善:结构,光学和磁性的比较研究

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摘要

Here, we have elucidated the structural, optical, magnetic and electrical properties of Cd0.8Fe0.2S which is considered as diluted magnetic semiconductor (DMS). Cd0.8Fe0.2S materials were synthesized using co-precipitation (compound 1) and hydrothermal (compound 2) method. The particle size and the polycrystalline phase of the synthesized materials are significantly influenced by the synthesis procedures. Presence of antiferromagnetic coupling confirms the magnetic behavior of materials. The current-voltage (I-V) characteristics exhibit lower barrier height for the device based on compound 2 (0.59 eV) than the other device (0.64 eV). Furthermore, the 19 times enhanced mobility and lesser density of states near the Fermi level for the Al/compound 2/ITO configured device is enlightened by the space charge conduction mechanism. But, the interface resistances of the devices cannot be distinguished by the I-V characteristics. Therefore, we have tackled the problem by simulating the Nyquist plots obtained from impedance spectroscopy. We have fitted the Nyquist plots with the appropriate equivalent circuit and explained the mechanism of charge transport through the Schottky interface. The higher dc conductivity and lower relaxation time of diode fabricated by compound 2 confirm the outcomes obtained from I-V characteristics. The effect of particle size on charge transport was also analyzed.
机译:这里,我们阐明了CD0.8Fe0.2的结构,光学,磁性和电性能,其被认为是稀释的磁半导体(DMS)。使用共沉淀(化合物1)和水热(化合物2)方法合成CD0.8Fe0.2。合成材料的粒径和多晶相受合成程序的影响。反铁磁耦合的存在证实了材料的磁性行为。电流 - 电压(I-V)特性基于化合物2(0.59eV)的器件的屏障高度低于其他装置(0.64eV)。此外,通过空间电荷传导机构对Al /化合物2 / ITO配置装置附近的FERMI水平附近的9倍的迁移率和较小的密度。但是,通过I-V特性不能区分设备的界面电阻。因此,我们通过模拟从阻抗光谱学获得的奈奎斯特图来解决问题。我们已经用适当的等效电路安装了奈奎斯特图,并通过肖特基界面解释了电荷运输机制。由化合物2制造的二极管的越高的直流电导率和较低的弛豫时间确认了从I-V特性获得的结果。还分析了粒度对电荷传输的影响。

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