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首页> 外文期刊>Materials science in semiconductor processing >An investigation of recast behavior in laser ablation of 4H-silicon carbide wafer
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An investigation of recast behavior in laser ablation of 4H-silicon carbide wafer

机译:4H碳化硅晶圆激光消融循环行为的研究

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4H-silicon carbide (SiC) is a suitable semiconductor material for high-speed power devices but also a typical difficult-to-process and hard-brittle material. Laser ablation is an efficient approach to process SiC. However, recast layer is an inevitable thermal damage during laser ablation. The present study experimentally and numerically investigated the recast behavior in laser ablation of 4H-SiC. The recast humps are with height of 1.4-3.3 mu m and width of 12-22 mu m, consist of SiC, Si, and SiO2, where 15.08 wt% of oxygen is detected. Microcracks and pore clusters are observed on the recast humps under SEM. Recoil pressure and surface tension in the molten pool dominate the process of recast hump formation. The recoil pressure of Si vapor is 2.27 MPa at 5000 K, as high as 22 times of atmospheric pressure. The simulation results show that the fluid in the middle flows around while the surrounding fluid flows upwards. The upward flow is almost laminar while the flow at the bottom of the molten pool is turbulent entertaining air and forming bubbles. The vaporization-induced keyhole in the molten pool becomes deeper and the sidewall becomes more inclined over time, accompanying with the "growing" of the recast hump. There are mainly three reasons causing the increase of recast height and recast width with the increased average laser power: (a) increase of recoil pressure; (b) increase of temperature gradient in the molten pool, enhancing the Marangoni convection; and (c) enlarging the molten pool and leading to more materials melting. With the decrease of the laser scanning speed, more liquid molten material is evaporated in the molten pool instead of being ejected outward to form recast humps. The increase of the laser pulse frequency decreases the peak laser intensity and hence results in the decrease of the recoil pressure. Besides, it also leads to the weakening of the heating ability of laser and lessening of the liquid molten material that could be ejected.
机译:4H-碳化硅(SiC)是用于高速功率器件的合适半导体材料,也是典型的难以加工和硬质材料。激光烧蚀是一种有效的处理SiC的方法。然而,重量层是激光消融期间的不可避免的热损坏。本研究实验和数值研究了4H-SiC激光消融中的重量行为。重量脉冲率高1.4-3.3μm,宽度为12-22μm,由SiC,Si和SiO 2组成,其中检测到15.08wt%的氧气。在SEM下的Recrist Humps上观察到微裂纹和孔簇。熔池中的反冲压力和表面张力占主导地位重量驼峰形成的过程。 Si蒸汽的反冲压力为2.27MPa,5000k,高达22倍的大气压。仿真结果表明,中间的流体在周围的流体向上流动时流动。向上流动几乎是层流,而熔池底部的流动是湍流的娱乐空气并形成气泡。熔池中的蒸发诱导的钥匙孔变得更深,并且侧壁随时间变得更倾向,随着速度驼峰的“生长”而伴随。主要有三种原因,导致速度高度和重档宽度的增加,平均激光功率增加:(a)升压的增加; (b)熔池中温度梯度的增加,增强了Marangoni对流; (c)扩大熔池并导致更多的材料熔化。随着激光扫描速度的降低,在熔池中蒸发更多的液态熔融材料,而不是向外喷射以形成重量脉冲。激光脉冲频率的增加降低了峰值激光强度,因此导致反冲压力的降低。此外,它还导致激光加热能力和可弹出的液态熔融材料的削弱。

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