Real function of semiconducting polymer in GaAs/polymer planar heterojunction solar cells

摘要

We systematically investigated GaAs/polymer hybrid solar cells in a simple planar junction, aiming to fundamentally understand the function of semiconducting polymers in GaAs/polymer-based heterojunction solar cells. A library of semiconducting polymers with different band gaps and energy levels were evaluated in GaAs/polymer planar heterojunctions. The optimized thickness of the active polymer layer was discovered to be ultrathin (～10 nm). Further, the open-circuit voltage (V_(oc)) of such GaAs/polymer planar heterojunctions was fixed around 0.6 V, regardless of the HOMO energy level of the polymer employed. On the basis of this evidence and others, we conclude that n-type GaAs/polymer planar heterojunctions are not type II heterojunctions as originally assumed. Instead, n-type GaAs forms a Schottky barrier with its corresponding anode, while the semiconducting polymer of appropriate energy levels can function as hole transport layer and/or electron blocking layer. Additionally, we discover that both GaAs surface passivation and thermal annealing can improve the performance of GaAs/polymer hybrid solar cells.