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Probing exciton localization in single-walled carbon nanotubes using high-resolution near-field microscopy

机译:使用高分辨率近场显微镜探测单壁碳纳米管中的激子定位

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摘要

We observe localization of excitons in semiconducting single-walled carbon nanotubes at room temperature using high-resolution near-field photoluminescence (PL) microscopy. Localization is the result of spatially confined exciton energy minima with depths of more than 15 meV connected to lateral energy gradients exceeding 2 meVm as evidenced by energy-resolved PL imaging. Simulations of exciton diffusion in the presence of energy variations support this interpretation predicting strongly enhanced PL at local energy minima.
机译:我们使用高分辨率近场光致发光(PL)显微镜观察室温下半导体单壁碳纳米管中激子的定位。局域化是空间限制的激子能量极小值的结果,该极小值的深度超过15 meV,且横向能量梯度超过2 meV / nm,这通过能量分辨PL成像得以证明。在存在能量变化的情况下,激子扩散的模拟支持这一解释,预测在局部能量最小值处PL会大大增强。

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