Fuji Electric has developed and mass-produced several series of IGBT-IPMs (insulated gate bipolar transistor-intelligent power modules), beginning with the J-series in 1993, followed by the N-series in 1995 and then the R-series in 1997. The J-series realized low loss, the N-series achieves soft switching and the R-series realized high reliability, high cost performance and improved protection accuracy by adopting a protection function to guard against overheating of the chip. Against the backdrop of recent demands for higher frequency, smaller size, higher efficiency and lower noise requested of power electronics products, Fuji Electric has developed two new intelligent power modules, the R-IPM3, which is based on the R-IPM and provides improved loss characteristics, and the small and thin Econo IPM, which combines concepts of the R-IPM and Econo modules. This paper will introduce both of these modules. For the IGBT, we developed a NPT (non punch through) microchip (T-series) having a thickness of 100 μm, which was realized by the establishment of a thin wafer process. For the FWD (free wheeling diode), we newly developed a new structure-FWD dies. This new FWD dies has an improved soft-recovery function. Table 1 lists the special features of each IPM series. We developed three series: the RTB type that has improved cost performance, the Econo IPM that is realized in a small-size and thin package, and the RTA type that has a low loss level. In Fig. 1, external views of the R-IPM3, Econo IPM and small capacity R-IPM3 are shown.
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