Imperceptible and Ultraflexible p-Type Transistors and Macroelectronics Based on Carbon Nanotubes

摘要

Flexible thin-film transistors based on semi-conducting single-wall carbon nanotubes are promising for flexible digital circuits, artificial skins, radio frequency devices, active-matrix-based displays, and sensors due to the outstanding electrical properties and intrinsic mechanical strength of carbon nanotubes. Nevertheless, previous research effort only led to nanotube thin-film transistors with the smallest bending radius down to 1 mm. In this paper, we have realized the full potential of carbon nanotubes by making ultraflexible and imperceptible p-type transistors and circuits with a bending radius down to 40 mu m. In addition, the resulted transistors show mobility up to 12.04 cm(2) V-1 s(-1), high on-off ratio (similar to 10(6)), ultralight weight (<3 g/m(2)), and good mechanical (accommodating severe crumpling and 67% compressive strain). Furthermore, the nanotube circuits can operate properly with 33% compressive strain. On the basis of the aforementioned features, our ultraflexible p-type nanotube transistors and circuits have great potential to work as indispensable components for ultraflexible complementary electronics.