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Glass-Free CuMoO4 Ceramic with Excellent Dielectric and Thermal Properties for Ultralow Temperature Cofired Ceramic Applications

机译:具有优异介电和热性能的无玻璃CuMoO4陶瓷,用于超低温共烧陶瓷应用

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摘要

A new glass-free low temperature sinterable CuMoO4 ceramic was prepared by a solid state ceramic route. The structural, microstructural, electron dispersive spectrum, and X-ray photoelectron spectroscopy analysis revealed the quality of the material synthesized. The CuMoO4 ceramic sintered at 650 ℃ exhibits densification of 96% and low coefficient of thermal expansion (CTE) of 4.6 ppm/℃ in the temperature range of 25-500 ℃. It has relative permittivity (εr) of 7.9, quality factor (Qf) of 53 000 GHz, and temperature coefficient of resonant frequency (τf) of -36 ppm/℃ (25-85 ℃) at 12.7 GHz. The sintered ceramic also shows εr of 11 and low dielectric loss (tan δ) of 2.7 × 10~(-4) at the frequency of 1 MHz. The full width half-maximum (fwhm) of A_(1g) Raman mode of CuMoO4 ceramic at different sintering temperatures correlate well with the Qf values. The low sintering temperature, low relative permittivity, high-quality factor, and matching coefficient of thermal expansion to that of Si make CuMoO4 a suitable candidate for ultralow temperature cofired ceramic (ULTCC) applications.
机译:通过固态陶瓷法制备了一种新型的无玻璃低温可烧结CuMoO4陶瓷。结构,微结构,电子分散谱和X射线光电子能谱分析揭示了合成材料的质量。在650℃烧结的CuMoO4陶瓷在25-500℃的温度范围内表现出96%的致密化和4.6 ppm /℃的低热膨胀系数(CTE)。它的相对介电常数(εr)为7.9,品质因数(Qf)为53000 GHz,在12.7 GHz时的谐振频率温度系数(τf)为-36 ppm /℃(25-85℃)。烧结陶瓷在1 MHz频率下的εr为11,介电损耗(tanδ)低,为2.7×10〜(-4)。 CuMoO4陶瓷在不同烧结温度下的A_(1g)拉曼模式的半峰全宽(fwhm)与Qf值密切相关。较低的烧结温度,较低的相对介电常数,高品质因数以及与Si匹配的热膨胀系数使CuMoO4成为超低温共烧陶瓷(ULTCC)应用的合适候选材料。

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