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Systematic study on the effect of solvent removal rate on the morphology of solvent vapor annealed ABA triblock copolymer thin films

机译:溶剂去除率对溶剂蒸气退火的ABA三嵌段共聚物薄膜形貌影响的系统研究

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Nanoscale self-assembly of block copolymer thin films has garnered significant research interest for nanotemplate design and membrane applications. To fulfill these roles, control of thin film morphology and orientation is critical. Solvent vapor annealing (SVA) treatments can be used to kinetically trap morphologies in thin films not achievable by traditional thermal treatments, but many variables affect the outcome of SVA, including solvent choice, total solvent concentration/swollen film thickness, and solvent removal rate. In this work, we systematically examined the effect of solvent removal rate on the final thin film morphology of a cylinder-forming ABA triblock copolymer. By kinetically trapping the film morphologies at key points during the solvent removal process and then using successive ultraviolet ozone (UVO) etching steps followed by atomic force microscopy (AFM) imaging to examine the through-film morphologies of the films, we determined that the mechanism for cylinder reorientation from substrate-parallel to substrate-perpendicular involved the propagation of changes at the free surface through the film toward the substrate as a front. The degree of reorientation increased with successively slower solvent removal rates. Furthermore, the AFM/UVO etching scheme permitted facile real-space analysis of the thin film internal structure in comparison to cross-sectional transmission electron microscopy.
机译:嵌段共聚物薄膜的纳米级自组装已经引起了纳米模板设计和膜应用的重大研究兴趣。为了发挥这些作用,控制薄膜形态和取向至关重要。溶剂蒸气退火(SVA)处理可用于动态捕获传统热处理无法实现的薄膜形态,但是许多变量会影响SVA的结果,包括溶剂选择,总溶剂浓度/溶胀膜厚和溶剂去除率。在这项工作中,我们系统地研究了溶剂去除速率对形成圆柱体的ABA三嵌段共聚物的最终薄膜形态的影响。通过在溶剂去除过程中动态捕获关键点处的膜形貌,然后使用连续的紫外线臭氧(UVO)蚀刻步骤,然后通过原子力显微镜(AFM)成像来检查膜的贯穿膜形貌,我们确定了机理从圆柱体平行于基底到垂直于圆柱体的方向重新定向的过程涉及在自由表面处的变化通过薄膜朝着基底作为前向传播。随着溶剂去除速率的逐渐降低,重新定向的程度增加。此外,与横截面透射电子显微镜相比,AFM / UVO蚀刻方案允许对薄膜内部结构进行便捷的真实空间分析。

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