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首页> 外文期刊>Ferroelectrics >Memory effects of relaxor ferroelectric 0.70Pb(Mg1/3Nb2/3)O-3-0.30PbTiO(3) single crystals studied by dielectric spectroscopy
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Memory effects of relaxor ferroelectric 0.70Pb(Mg1/3Nb2/3)O-3-0.30PbTiO(3) single crystals studied by dielectric spectroscopy

机译:松弛剂铁电0.70pb(mg1 / 3nb2 / 3)O-3-0.30pbtio(3)通过介电光谱研究的单晶的记忆效应

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Dielectric properties of relaror ferroelectric 0.70Pb(Mg1/3Nb2/3)O-3-0.30PbTiO(3) (PMN-30PT) single crystals were studied under the external electric field in a wide temperature range. After removing the field, dielectric spectra measured on zero field heating were different from initial condition, and this fact indicates the presence of a strong memory effect in PMN-30PT crystals. To clarify the correlation between this memory effect and polar nanoregions, dielectric spectra measured under the constant field were studied after short-circuiting the electrodes of a poled crystal at different high temperature regions. The process of removing the memory effect was clarified, which is extremely necessary for device application.
机译:在宽温度范围内,在外部电场下研究了relorOR铁电0.70pb(mg1 / 3nb2 / 3)O-3-0.30pbtio(3)(PMN-30pt)单晶的单晶。 在去除该领域之后,在零场加热上测量的介电光谱与初始条件不同,并且该事实表明PMN-30PT晶体中存在强烈的记忆效果。 为了阐明该记忆效应和极纳米导致之间的相关性,在不同高温区域的电极短路之后研究在恒定场下测量的电介质光谱。 澄清了去除存储器效果的过程,这对于设备应用是非常必要的。

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