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首页> 外文期刊>European Physical Journal Plus >Study of exposure buildup factors with detailed physics for cobalt-60 gamma source in water, iron, and lead using the MCNPX code
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Study of exposure buildup factors with detailed physics for cobalt-60 gamma source in water, iron, and lead using the MCNPX code

机译:用MCNPX码对钴-60伽马源的详细物理曝光累积因子研究

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.In the past, the exposure buildup factors have been calculated with simple physics (free-electron Compton scattering, no coherent scattering, and only K X-ray) such as ANS-6.4.3, etc.. However, in this paper, we calculated the exposure buildup factors for cobalt-60 gamma source with detailed physics (bound-electron Compton scattering, coherent scattering, bremsstrahlung photons and K and L X-rays, pair production) using the MCNPX code. We also showed that there is a significant difference between simple physics and detailed physics for calculating the exposure buildup factors for high atomic number elements. In this work, we used the MCPNX code to perform Monte Carlo simulations as this methodology can provide a better description of the complex chain of microscopic processes involved in the whole volume of material. Therefore, considering the various applications of cobalt-60 both in the industry and in medicine, calculating the exposure buildup factors with detailed physics is very important. In this work, we calculated the exposure buildup factors of cobalt-60 gamma source up to depths of 20 mean free path (mfp) of water, iron and lead with detailed physics through Monte Carlo method by the MCNPX 2.6 code (with particle splitting as an appropriate variance reduction technique). To validate the results, we calculated the exposure buildup factors (with simple physics and detailed physics by the MCNPX code) for a 1 MeV monoenergetic gamma source up to depths of 20 mfp of water, iron and lead and our results showed a good agreement with the literature. Our paper shows that the MCNPX code can be used to calculate the exposure buildup factors of monoenergetic and multi-energy gamma sources with simple physics and detailed physics and to provide an estimate of the difference in the factors between choosing the former or the latter.
机译:在过去,曝光积聚因子已经用简单的物理(自由电子康普顿散射,没有相干散射,并且只有K X射线)计算,例如ANS-6.4.3等。但是,在本文中,我们计算了使用MCNPX码的详细物理学(绑定 - 电子Compton散射,相干散射,Bremsstrahlung光子和K和L X射线,对生产)的曝光积累因子。我们还表明,简单的物理和详细物理之间存在显着差异,用于计算高原子数元素的曝光积聚因子。在这项工作中,我们使用MCPNX代码进行蒙特卡罗模拟,因为该方法可以提供对整个材料体积涉及的显微镜过程的复杂链条的更好描述。因此,考虑到工业和医学中的钴-6的各种应用,计算具有详细物理的暴露积聚因子非常重要。在这项工作中,我们计算了钴-60伽马源的曝光积聚因子,最高达到20个平均自由路径(MFP)的水,铁和通过MCNPX 2.6代码通过Monte Carlo方法进行详细的物理学(具有粒子分裂适当的差异减少技术)。为了验证结果,我们计算了曝光积聚因子(通过MCNPX代码的简单物理和详细的物理),为1 Mev单齿伽玛源最多为20 MFP的水,铁和铅,我们的结果表明符合良好文献。我们的论文表明,MCNPX代码可用于计算单体和多能量伽玛来源的曝光积累因子,并具有简单的物理和详细的物理,并提供了选择前者或后者之间的因素的差异的估计。

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