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Controllable Multistep Preparation Method for High-Efficiency Perovskite Solar Cells with Low Annealing Temperature in Glove Box

机译:可控多步对手套箱中退火温度的高效Perovskite太阳能电池的制备方法

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Perovskite solar cells (PeSCs) fabricated by a two-step method have achieved high power conversion efficiency (PCE). Although two-step fabrication makes the formation of perovskite films much easier to control, the too fast reaction between the lead source (such as PbI2) and halogenated organic/inorganic cation (such as formamidinium iodide [FAI]) during the high-temperature (approximate to 150 degrees C for FAPbI(3)) annealing hinders further reaction progress, leaving a large amount of unreacted lead source. This annealing in air is a mandatory step to achieve high-quality perovskite films and then high-efficiency devices with the aid of moisture, which is detrimental to device stability. Herein, a multistep preparation procedure (recoating FA(0.9)MA(0.1)I solution) is proposed to obtain a well-defined perovskite film with large crystal domain size (approximate to several micrometers) and reduced grain boundary at low annealing temperature without the help of moisture (i.e., 60 degrees C in glove box). As a result, a device with high PCE up to 19.301% is achieved using the multistep prepared perovskite film. The high-quality perovskite film is attributed to the dissolution-recrystallization process during the repeated FA(0.9)MA(0.1)I coating procedure. The capability of this multistep method is further demonstrated in fabricating high-performance devices (PCE of 17.762%) without the annealing procedure.
机译:由两步法制造的钙钛矿太阳能电池(PESCS)实现了高功率转换效率(PCE)。虽然两步制作使得钙钛矿薄膜的形成更容易控制,但在高温期间,引线源(如PBI2)和卤代有机/无机阳离子(例如甲脒碘化物[FAI])之间的太快反应(如甲脒碘化物[FAI])对于FAPBI(3)的150℃,退火阻碍了进一步反应进展,留下大量未反应的铅源。这种在空气中的退火是实现高质量的钙钛矿薄膜,然后借助于水分实现高效装置的强制性步骤,这对装置稳定性有害。在此,提出了一种多步准备方法(重新涂覆FA(0.1)mA(0.1)I溶液),以获得具有大晶域尺寸(近似为几微米)的明确限定的钙钛矿膜,并且在不带的低退火温度下降低晶界。没有水分的帮助(即手套箱60℃)。结果,使用MultiSep制备的Perovskite膜实现高达19.301%的高达19.301%的装置。高质量的钙钛矿膜归因于重复的Fa(0.9)MA(0.1)涂层程序期间的溶解 - 再结晶过程。在没有退火过程的情况下,进一步证明了这种多步骤方法的能力在制造高性能器件(PCE为17.762%)。

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