The Investigation of Gyroelectric n-InAs Phase Shifters Characteristics

摘要

The microwave phase shifters can be manufactured using microstrip lines and open cylindrical waveguides [1]. The propagation and attenuation of phase wave's characteristics may vary in ferrite and semiconductor waveguides by changing longitudinal magnetic flux density, external dielectric layer width and permittivity of dielectric layer, semiconductor temperature, the concentration of the free charge carriers. Nowadays the investigation of the semiconductor and semiconductor-dielectric waveguides is very relevant and important for the sake of science. The usage and possibilities of latter mentioned waveguides in gyroelectric phase shifters are not known [2-4]. n-InAs semiconductor has been selected for the purpose of investigation. The super high frequency transistors are manufactured using n-InAs semiconductors, which have the higher concentration of electrons. The influence of external dielectric layer on the parameters of gyroelectric n-InAs semiconductor and semiconductor-dielectric phase shifters has been hardly investigated in this paper. The aim is to maximize the differential phase shift module at a relatively low concentration of electrons. The dispersion, phase and attenuation characteristics of the phase shifters are investigated, when the main type hybrid mode HE_(11) propagates in phase shifters.