首页> 外文期刊>ECS Journal of Solid State Science and Technology >Local, Temperature-Dependent Trapping and Detrapping in the LiGa5O8:Cr Infrared Emitting Persistent Phosphor
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Local, Temperature-Dependent Trapping and Detrapping in the LiGa5O8:Cr Infrared Emitting Persistent Phosphor

机译:LIGA5O8中的局部,温度依赖性捕获和折叠:CR红外发射持久荧光粉

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摘要

The near-infrared emitting persistent phosphor LiGa5O8:Cr3+ (LGO:Cr) has promising applications in bioimaging. In order to improve the persistent luminescence of LGO:Cr and other Cr-doped persistent phosphors, a better understanding of trapping and detrapping mechanisms is necessary. In this work, we study the afterglow and thermoluminescence via a thermal fading experiment. The results show that there is a broad trap distribution present in LGO:Cr. The emission spectrum of chromium changes during the afterglow, which indicates that different Cr ions experience a varying crystal field in the LGO host, due to different defect configurations, and that the detrapping process occurs locally. The results of thermoluminescence and spectral decay measurements show that chromium ions residing near deep traps are subject to a smaller crystal field. Vacancies formed during the synthesis are most probably causing this effect. Codoping LGO with Si4+ or Ge4+ significantly improves the persistent luminescence and increases the number of deep-lying traps in the phosphor. (c) The Author(s) 2017. Published by ECS. All rights reserved.
机译:近红外发射持续磷光体Liga5O8:Cr3 +(Lg:Cr)在生物体中具有希望的应用。为了改善LGO的持续发光:Cr和其他CR掺杂的持久磷光体,更好地了解捕获和脱滴机制。在这项工作中,我们通过热衰落实验研究余辉和热荧光。结果表明,LGO有广泛的陷阱分布:Cr。余辉期间铬变化的发射光谱,表示不同的Cr离子在LGO主体中经历不同的晶体场,由于不同的缺陷配置,并且脱氮过程在本地发生。热敏发光和光谱衰减测量结果表明,驻留在深阱附近的铬离子受到更小的晶体场。合成期间形成的空位最可能导致这种效果。具有Si4 +或GE4 +的重型LGO显着改善了持续发光并增加了磷光体中深层陷阱的数量。 (c)2017年提交人。由ECS发布。版权所有。

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