Publisher's Note: Amorphous Gallium Oxide as an Improved Host for Inorganic Light-Emitting Thin Film Semiconductor Fabricated at Room Temperature on Glass (vol 6, pg P410, 2017)

著录项

• 来源
  《ECS Journal of Solid State Science and Technology》 |2017年第8期|共1页
• 作者

  Watanabe Naoto; Kim Junghwan; Ide Keisuke; Hiramatsu Hidenori; Kumigashira Hiroshi; Ueda Shigenori; Hosono Hideo; Kamiya Toshio;

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• 作者单位

  Tokyo Inst Technol Lab Mat &

  Struct Midori Ku Yokohama Kanagawa 2268503 Japan;

  Tokyo Inst Technol Mat Res Ctr Element Strategy Midori Ku Yokohama Kanagawa 2268503 Japan;

  Tokyo Inst Technol Lab Mat &

  Struct Midori Ku Yokohama Kanagawa 2268503 Japan;

  Tokyo Inst Technol Lab Mat &

  Struct Midori Ku Yokohama Kanagawa 2268503 Japan;

  Inst Mat Struct Sci High Energy Accelerator Res Org KEK Photon Factory Tsukuba Ibaraki 3050801 Japan;

  Natl Inst Mat Sci Res Ctr Adv Measurement &

  Characterizat Tsukuba Ibaraki 3050047 Japan;

  Tokyo Inst Technol Lab Mat &

  Struct Midori Ku Yokohama Kanagawa 2268503 Japan;

  Tokyo Inst Technol Lab Mat &

  Struct Midori Ku Yokohama Kanagawa 2268503 Japan;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类 电化学工业;
• 关键词