Growth of Nanolaminates of Thermoelectric Bi_2Te_3/Sb_2Te_3 by Atomic Layer Deposition

摘要

The fabrication of thermoelectric nanolaminate structures of alternating Bi_2Te_3 and Sb_2Te_3 ALD layers for thermoelectric application is reported. Trimethylsilyl telluride ((Me_3Si)_2Te), bismuth trichloride (BiCl_3) and antimony trichloride (SbCl_3) were utilized as chemical ALD precursors for telluride, bismuth and antimony, respectively. The results of field emission scanning electron microscopy (FE-SEM) indicate both metal tellurides exhibit the prevalent Volmer-Weber island growth mechanism with characteristic hexagonal crystallites. High resolution TEM X-section analysis reveals localized epitaxial growth of alternating ALD Bi_2Te_3 and Sb_2Te_3 layers within the large islands.