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Enhanced Optical and Electrical Properties of ITO/Ag/AZO Transparent Conductors for Photoelectric Applications

机译:增强光电应用ITO / AG / AZO透明导体的光学和电性能

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The enhancement of the optical and electrical properties of TCO films was investigated by depositing different layers of AZO (100 nm), Ag (5 nm)/AZO (95 nm), and ITO (45 nm)/Ag (5 nm)/AZO (50 nm) upon n-Si substrate at room temperature by magnetron sputtering method. The ITO/Ag/AZO device efficiently improved the electrical and optical properties with the low sheet resistance of 2.847 Omega/sq. and an increase in the rectification ratio of 455.60% when compared with AZO and Ag/AZO devices. The combination of ITO/Ag/AZO provided the optimum results in all the electrical and optical properties. These results showed that within the optimized thickness range of 100 nm, compared to AZO and Ag/AZO, ITO/Ag/AZO device showed the improvement for both optical and electrical properties at room temperature.
机译:通过沉积不同的偶氮(100nm),Ag(5nm)/偶氮(95nm)和ITO(45nm)/ Ag(5nm)/偶氮来研究TCO膜的光学和电性能的增强 (50nm)在室温下N-Si衬底通过磁控溅射法。 ITO / AG / AZO器件有效地改进了电气和光学性能,具有2.847ω/平方的低薄层电阻。 与AZO和AG / AZO器件相比,整流比的整流比率为455.60%。 ITO / AG / AZO的组合提供了所有电气和光学性质的最佳结果。 这些结果表明,与AZO和AG / AZO相比,ITO / AG / AZO装置相比,在100nm的优化厚度范围内,ITO / AG / AZO器件在室温下对光学和电性能的改善。

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