Confirmation of the Degradation of Single Junction Amorphous Silicon Modules (a-Si:H)

摘要

This study examines the degradation of single junction amorphous silicon (a-Si:H) photovoltaic (PV) modules. It summarises the main results obtained from over 7 years of field investigation of the degradation mechanisms of a-Si:H modules. The investigation was based on performance parameters such as fill factors, parasitic resistances, and ideality factors. The initial efficiencies for these modules were in accordance with the expected values; however, a significant decrease was observed during the monitoring period.